scholarly journals Oxygen Vacancy Induced Room-Temperature Metal–Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics

2016 ◽  
Vol 8 (15) ◽  
pp. 9769-9776 ◽  
Author(s):  
Le Wang ◽  
Sibashisa Dash ◽  
Lei Chang ◽  
Lu You ◽  
Yaqing Feng ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Potential Application ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation

Science ◽  
2013 ◽  
Vol 339 (6126) ◽  
pp. 1402-1405 ◽  
Author(s):  
J. Jeong ◽  
N. Aetukuri ◽  
T. Graf ◽  
T. D. Schladt ◽  
M. G. Samant ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Electric Field ◽  
Insulator Transition ◽  
Vacancy Formation ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Oxygen Vacancy Formation

Electroresistance Effect due to Mo Substitution at Mn-Site in Monovalent Doped La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) Manganites

2021 ◽  
Vol 317 ◽  
pp. 17-21
Author(s):  
Muhammad Syazwan Mohd Sabri ◽  
Nur Ain Athirah Che Apandi ◽  
Norazila Ibrahim
Keyword(s):  
Transition Temperature ◽  
Low Temperature ◽  
Temperature Region ◽  
Potential Application ◽  
Insulator Transition ◽  
Applied Current ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Magnetic Inhomogeneity ◽  
Spintronic Devices

The electroresistance, ER effect of La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) samples prepared using solid method are investigated. The increased of applied current from 5 mA to 10 mA does not change the metal-insulator transition temperature, TMI for both samples however decreased the resistivity in the temperature region of 50 K – 300 K. Both samples exhibit large ER effect at low temperature region. At TMI, the ER value is 75.5% (x =0) and decrease to 34.15% (x = 0.05). However, at 300 K, the value of ER increases to 57 % for Mo substituted sample, and the value decreases to 6.4% for the x =0 sample. The enhanced ER effect at 300 K may be due to the growth of conductive filaments under increased applied current. The increase of applied current may perturb the arrangement of magnetic inhomogeneity induced by Mo substitution, result in reduction of resistivity and lead to the observation of ER effect. These findings suggest potential application of La0.85Ag0.15Mn1-xMoxO3 (x = 0.05) in spintronic devices.

Transport Anomalies above Room Temperature and Metal-Insulator Transition of High-Tc Oxides

1994 ◽  
pp. 145-150
Author(s):  
Masatoshi Sato ◽  
Takashi Nishikawa ◽  
Jun Takeda ◽  
Hiroshi Harashina ◽  
Shinichi Shamoto ◽  
...  
Keyword(s):  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
High Tc

scholarly journals Metal–insulator-transition engineering by modulation tilt-control in perovskite nickelates for room temperature optical switching

2018 ◽  
Vol 115 (38) ◽  
pp. 9515-9520 ◽  
Author(s):  
Zhaoliang Liao ◽  
Nicolas Gauquelin ◽  
Robert J. Green ◽  
Knut Müller-Caspary ◽  
Ivan Lobato ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Switching ◽  
Room Temperature ◽  
Target Material ◽  
Insulator Transition ◽  
Fine Tuning ◽  
Perovskite Oxide ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Bond Angles

In transition metal perovskites ABO3, the physical properties are largely driven by the rotations of the BO6 octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths, and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as an approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes—that is, directly on the bond angles. By intercalating the prototype SmNiO3 target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials’ properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants, and oxygen rotation angles), and the relative thicknesses of the target and tilt-control materials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO3 compound. With this unique approach, we successfully adjusted the metal–insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.

Metal–insulator transition at room temperature and infrared properties of Nd0.7Eu0.3NiO3 thin films

2002 ◽  
Vol 81 (4) ◽  
pp. 619-621 ◽  
Author(s):  
F. Capon ◽  
P. Laffez ◽  
J.-F. Bardeau ◽  
P. Simon ◽  
P. Lacorre ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Tunable metal-insulator transition in Nd1−xYxNiO3 (x = 0.3, 0.4) perovskites thin film at near room temperature

2015 ◽  
Vol 107 (2) ◽  
pp. 021904 ◽  
Author(s):  
Tao Shao ◽  
Zeming Qi ◽  
Yuyin Wang ◽  
Yuanyuan Li ◽  
Mei Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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