Solvation of ions. Some applications. I. Electrorefining of silver by means of silver sulphate solutions in mixtures of water with 3-hydroxypropionitrile

1974 ◽  
Vol 27 (4) ◽  
pp. 721 ◽  
Author(s):  
AJ Parker ◽  
JW Diggle ◽  
J Avraamides
Keyword(s):  
Sulphuric Acid ◽  
Electrolyte Solution ◽  
Current Density ◽  
High Purity ◽  
Solvation Of Ions ◽  
Porous Cathodes ◽  
Silver Sulphate ◽  
A Current ◽  
Vertical Cell

High purity, adherent, non-dendritic, porous cathodes can be produced at 100-300 MV by electrolysing at > 98% efficiency a silver anode at 30-35�C for 48 h in a simple vertical cell without diaphragm at a current density of 100-150 A/m2. The electrolyte solution contains water, 150 g/l. 3-hydroxypropionitrile, 140 g/l. sulphuric acid and 0.2M silver sulphate.

CATHODIC POLARIZATION OF SILVER IN SULPHURIC ACID

1959 ◽  
Vol 37 (1) ◽  
pp. 222-227 ◽  
Author(s):  
A. A. Antoniou ◽  
F. E. W. Wetmore
Keyword(s):  
Sulphuric Acid ◽  
Current Density ◽  
Cathodic Polarization ◽  
Density Range ◽  
Current Density Range ◽  
Symmetry Factor ◽  
Tafel Slopes ◽  
Silver Cathodes ◽  
Hydrogen Overpotential ◽  
A Current

The hydrogen overpotential on fine silver cathodes has been determined from 2 to 35° and over a current density range from 0.03 to 2000 μa cm−2. Two Tafel slopes were observed, RT/F at low currents, 2RT/F at high currents. The stoichiometric number was found to be one and the symmetry factor one-half at low currents. The heat of activation changed from 18.8 kcal at low currents to 14.3 at high currents.

Facet Topography and Dislocation Structure as a Possible Source for Electrical Heterogeneity in [001] TILT Bicrystals of YBa2Cu3O7-δ

1996 ◽  
Vol 54 ◽  
pp. 338-339
Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock
Keyword(s):  
Grain Boundary ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Electromagnetic Properties ◽  
Length Scale ◽  
Density Values ◽  
Current Densities ◽  
Applied Fields ◽  
A Current

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.

A highly stable CoMo2S4/Ni3S2 heterojunction electrocatalyst for efficient hydrogen evolution

2021 ◽  
Author(s):  
Minmin Wang ◽  
Mengke Zhang ◽  
Wenwu Song ◽  
Weiting Zhong ◽  
Xunyue Wang ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Current Density ◽  
A Current

A CoMo2S4/Ni3S2 heterojunction is prepared with an overpotential of only 51 mV to drive a current density of 10 mA cm−2 in 1 M KOH solution and ∼100% of the potential remains in the ∼50 h chronopotentiometric curve at 10 mA cm−2.

Real-Time Tem Studies of Electromigration in Submicron Aluminum Runners

1995 ◽  
Vol 391 ◽  
Author(s):  
S. P. Riege ◽  
A. W. Hunt ◽  
J. A. Prybyla
Keyword(s):  
Real Time ◽  
Joule Heating ◽  
Current Density ◽  
Constant Voltage ◽  
Sample Design ◽  
A Current

AbstractDirect real-time observations of electromigration (EM) in submicron Al interconnects were made using a special sample-stage which allowed TEM observations to be recorded while simultaneously heating and passing current through the sample. The samples consisted of 4000 Å thick Al(0.5wt%Cu) patterned over a TEM-transparent window into five runners in parallel, with linewidths 0.2, 0.3, 0.5, 0.8, and 1.0 μm. Both passivated and unpassivated samples were examined. A current density of 2 x 106A/cm2 was used with temperatures ranging from 200 - 350°C. The experiments were done using constant voltage testing, and we used a special sample design which dramatically minimized Joule-heating. Our approach has allowed us to directly observe voids form, grow, migrate, pin, fail a runner, and heal, all with respect to the detailed local microstructure of the runners.

scholarly journals Hysteresis Analysis of Hole-Transport-Material-Free Monolithic Perovskite Solar Cells with Carbon Counter Electrode by Current Density–Voltage and Impedance Spectra Measurements

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 48
Author(s):  
Syed Afaq Ali Shah ◽  
Muhammad Hassan Sayyad ◽  
Jinghua Sun ◽  
Zhongyi Guo
Keyword(s):  
Time Delay ◽  
Current Density ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Impedance Spectra ◽  
Voltage Measurement ◽  
Sweep Time ◽  
Measurement Protocol ◽  
A Current

Due to the tremendous increase in power conversion efficiency (PCE) of organic–inorganic perovskite solar cells (PSCs), this technology has attracted much attention. Despite being the fastest-growing photovoltaic technology to date, bottlenecks such as current density–voltage (J–V) hysteresis have significantly limited further development. Current density measurements performed with different sweep scan speeds exhibit hysteresis and the photovoltaic parameters extracted from the current density–voltage measurements for both scan directions become questionable. A current density–voltage measurement protocol needs to be established which can be used to achieve reproducible results and to compare devices made in different laboratories. In this work, we report a hysteresis analysis of a hole-transport-material-free (HTM-free) carbon-counter-electrode-based PSC conducted by current density–voltage and impedance spectra measurements. The effect of sweep scan direction and time delay was examined on the J–V characteristics of the device. The hysteresis was observed to be strongly sweep scan direction and time delay dependent and decreased as the delay increased. The J–V analysis conducted in the reverse sweep scan direction at a lower sweep time delay of 0.2 s revealed very large increases in the short circuit current density and the power conversion efficiency of 57.7% and 56.1%, respectively, compared with the values obtained during the forward scan under the same conditions. Impedance spectroscopy (IS) investigations were carried out and the effects of sweep scan speed, time delay, and frequency were analyzed. The hysteresis was observed to be strongly sweep scan direction, sweep time delay, and frequency dependent. The correlation between J–V and IS data is provided. The wealth of photovoltaic and impendence spectroscopic data reported in this work on the hysteresis study of the HTM-free PSC may help in establishing a current density–voltage measurement protocol, identifying components and interfaces causing the hysteresis, and modeling of PSCs, eventually benefiting device performance and long-term stability.

scholarly journals A Hierarchical Architecture of Functionalized Polyaniline/Manganese Dioxide Composite with Stable-Enhanced Electrochemical Performance

2021 ◽  
Vol 5 (5) ◽  
pp. 129
Author(s):  
Yapeng Wang ◽  
Yanxiang Wang ◽  
Chengjuan Wang ◽  
Yongbo Wang
Keyword(s):  
Electrochemical Performance ◽  
Manganese Dioxide ◽  
Specific Capacitance ◽  
Current Density ◽  
Electrode Materials ◽  
High Efficiency ◽  
Scanning Speed ◽  
Hierarchical Architecture ◽  
Electrochemical Window ◽  
A Current

As one of the most outstanding high-efficiency and environmentally friendly energy storage devices, the supercapacitor has received extensive attention across the world. As a member of transition metal oxides widely used in electrode materials, manganese dioxide (MnO2) has a huge development potential due to its excellent theoretical capacitance value and large electrochemical window. In this paper, MnO2 was prepared at different temperatures by a liquid phase precipitation method, and polyaniline/manganese dioxide (PANI/MnO2) composite materials were further prepared in a MnO2 suspension. MnO2 and PANI/MnO2 synthesized at a temperature of 40 °C exhibit the best electrochemical performance. The specific capacitance of the sample MnO2-40 is 254.9 F/g at a scanning speed of 5 mV/s and the specific capacitance is 241.6 F/g at a current density of 1 A/g. The specific capacitance value of the sample PANI/MnO2-40 is 323.7 F/g at a scanning speed of 5 mV/s, and the specific capacitance is 291.7 F/g at a current density of 1 A/g, and both of them are higher than the specific capacitance value of MnO2. This is because the δ-MnO2 synthesized at 40 °C has a layered structure, which has a large specific surface area and can accommodate enough electrolyte ions to participate the electrochemical reaction, thus providing sufficient specific capacitance.

scholarly journals Nanocrystalline TiO2Electrodes Exhibiting High Storage Capacity and Stability in Rechargeable Lithium Batteries

1995 ◽  
Vol 18 (1) ◽  
pp. 23-30 ◽  
Author(s):  
Sui-Yang Huang ◽  
Ladislav Kavan ◽  
Andreas Kay ◽  
Michael Grätzel ◽  
Ivan Exnar
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Discharge Voltage ◽  
Unit Weight ◽  
Nanocrystalline Films ◽  
Rechargeable Lithium Batteries ◽  
Capacity Loss ◽  
High Storage Capacity ◽  
First Time ◽  
A Current

Nanocrystalline TiO2films were explored for the first time as electrode material for a rechargeable lithium intercalation cell, i.e., Li/LiCF3SO3+ PC/TiO2. Two kinds of nanocrystalline films, TiO2F387 (Degussa) and TiO2colloid-240, were investigated. These films exhibited excellent performance renderings them a promising choice for secondary battery applications. At a current density of 0.01 mA/cm2, two voltage plateaus at 1.78 and 1.89 V were observed for TiO2F387 films during charge and discharge, respectively. The TiO2electrode charge capacity per unit weight rose with decreasing current density. The highest capacity, obtained at a current density of 0.005 mA/cm2and a final discharge voltage of 1.4 V, was 265 mAh/g corresponding to a lithium insertion ratio ofx= 0.8. Nanocrystalline TiO2colloid-240 films showed a similar performance. The cycle life of a TiO2colloid-240 cell at a high current density was found to be excellent; a capacity loss lower than 14% has been observed over 100 charge/discharge cycles.

Instability of tangential discontinuities in pinching plasmas

1999 ◽  
Vol 62 (1) ◽  
pp. 117-123 ◽  
Author(s):  
S. P. TSYBENKO
Keyword(s):  
Dispersion Relation ◽  
Simple Model ◽  
Current Pulse ◽  
Current Density ◽  
Strong Dependence ◽  
Plasma Instability ◽  
Tangential Discontinuity ◽  
Instability Increment ◽  
Tangential Discontinuities ◽  
A Current

A new mechanism for the formation of pinching plasma instability related to a tangential discontinuity is discussed. With this in mind we use a simple model of the Davydov–Zakharov class. It appears that there is a strong dependence of the instability increment on current density, resulting from the corresponding dispersion relation. Modulation of a current pulse is shown to be a possible way of stabilizing powerful discharges.

213 W 500 Mhz 4H-SiC Static Induction Transistor

2011 ◽  
Vol 130-134 ◽  
pp. 3392-3395 ◽  
Author(s):  
Gang Chen ◽  
Peng Wu ◽  
Song Bai ◽  
Zhe Yang Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Current Density ◽  
Drain Current ◽  
Total Power ◽  
Class Ab ◽  
Blocking Voltage ◽  
Finger Width ◽  
Static Induction Transistor ◽  
Recessed Gate ◽  
Total Power Output ◽  
A Current

. Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.7μm and the gate channel is 1.2μm. One cell has 400 source fingers and each source finger width is 100μm. 1mm SiC SIT yielded a current density of 123mA/mm of drain current at a drain voltage of 20V. A maximum current density of 150 mA/mm was achieved with Vd=40V. The device blocking voltage with a gate bias of-16 V was 200 V. Packaged 24-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 213 W was obtained with a power density of 8.5 W/cm and gain of 8.5 dB at 500 MHz under pulse operation.

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