Picosecond-range switching of high-voltage Si diode due to the delayed impact-ionization breakdown: Experiments vs simulations

2022 ◽  
Vol 131 (1) ◽  
pp. 014502
Author(s):  
Mikhail Ivanov ◽  
Viktor Brylevskiy ◽  
Irina Smirnova ◽  
Pavel Rodin
Keyword(s):  
High Voltage ◽  
Impact Ionization

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs

2009 ◽  
Vol 56 (3) ◽  
pp. 492-498 ◽  
Author(s):  
Lei Wang ◽  
Jun Wang ◽  
Chao Gao ◽  
Jian Hu ◽  
Paul Li ◽  
...  
Keyword(s):  
High Voltage ◽  
Impact Ionization ◽  
Physical Description

scholarly journals The Barkhausen Method to Investigate Powerful Processes during Action of Piezoelectric Igniters

2020 ◽  
Vol 26 (3) ◽  
pp. 358-362
Author(s):  
Linas ARDARAVIČIUS ◽  
Skirmantas KERŠULIS ◽  
Oleg KIPRIJANOVIČ ◽  
Česlovas ŠIMKEVIČIUS ◽  
Steponas AŠMONTAS
Keyword(s):  
Electric Fields ◽  
High Voltage ◽  
Impact Ionization ◽  
Domain Switching ◽  
Practical Importance ◽  
Total Duration ◽  
High Amplitude ◽  
High Voltage Pulse ◽  
Pulse Generation ◽  
The Impact

The Barkhausen method is proposed to clarify the cause of radiation of electromagnetic (EM) pulses during high voltage pulse generation by piezoelectric igniters (PIs). Wide bandwidth of the experimental setup was narrowed for a simultaneous registration of electric and detected EM pulses by a two-channel oscilloscope. The PI was loaded on a high ohmic resistance and high voltage pulses of 8 – 17 kV amplitude and up to 150 ms in total duration were registered. These pulses contained a series of short pulses called Barkhausen type pulses. Duration of these pulses having the relatively high amplitude was 30 – 40 ns. The registration revealed that the radiating EM pulse series corresponded to Barkhausen type pulse series. Short non-radiating negative pulses appearing during the saturated voltage growth were also observed and they had relaxation tails. The analysis showed that the EM pulses are caused as a result of domain switching with high voltage spikes at the PZT cylinders bases, where high electric fields are created. The activity of these switchings weakens when the “age” of PIs increases. The non-radiated pulses resulted from fast internal screening processes in the volume of the cylinders, accompanied by the impact ionization. The increase of the saturation and PI’s “age” causes lengthening of the relaxation tails. The results of practical importance for PIs in monitoring systems are placed. It is concluded that the Barkhausen method in wideband configuration is a convenient experimental arrangement for investigation of powerful processes in ferro-piezoelectric ceramics.

scholarly journals Экспериментальное наблюдение задержанного ударно-ионизационного пробоя полупроводниковых структур без p-n-переходов

2018 ◽  
Vol 44 (4) ◽  
pp. 66
Author(s):  
В.И. Брылевский ◽  
И.А. Смирнова ◽  
Н.И. Подольская ◽  
Ю.А. Жарова ◽  
П.Б. Родин ◽  
...  
Keyword(s):  
Experimental Data ◽  
Numerical Simulations ◽  
High Voltage ◽  
Ohmic Contacts ◽  
Impact Ionization ◽  
Avalanche Breakdown ◽  
Conducting State ◽  
Semiconductor Structures ◽  
Voltage Pulses

AbstractWe have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without p – n junctions when subnanosecond high-voltage pulses are applied. Silicon n ^+– n – n ^+ type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased p ^+– n – n ^+ diode structures. Experimental data are compared to the results of numerical simulations.

Time-resolved impact ionization in ZnSe high-voltage switches

1994 ◽  
Vol 22 (6) ◽  
pp. 1043-1048 ◽  
Author(s):  
A.Y. Elezzabi ◽  
H. Houtman ◽  
J. Meyer
Keyword(s):  
High Voltage ◽  
Impact Ionization ◽  
Time Resolved
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