[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs
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A novel high voltage three-phase monolithic inverter IC with two current levels sensing

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146110 ◽

2002 ◽

Cited By ~ 4

Author(s):

H. Miyazaki ◽

N. Sakurai ◽

K. Onda ◽

T. Tanaka ◽

M. Mori ◽

...

Keyword(s):

High Voltage ◽

Three Phase

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Operation of IGBTs at low temperatures

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146105 ◽

2002 ◽

Cited By ~ 4

Author(s):

T.P. Chow ◽

K.C. So ◽

D. Lau

Keyword(s):

Low Temperatures

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CMOS compatible 250 V lateral insulated base transistors

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146094 ◽

2002 ◽

Cited By ~ 1

Author(s):

E.M. Sankara Narayanan ◽

G.A.J. Amaratunga ◽

W.I. Milne ◽

Q. Huang

Keyword(s):

Cmos Compatible

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An application of MSSD to dielectrically isolated intelligent power IC

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146063 ◽

2002 ◽

Author(s):

T. Aso ◽

H. Mizuide ◽

T. Usui ◽

K. Akahane ◽

N. Ishikawa ◽

...

Keyword(s):

Power Ic

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Correlation between local segment characteristics and dynamic current redistribution in GTO power thyristors

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146081 ◽

2002 ◽

Cited By ~ 3

Author(s):

C.M. Johnson ◽

A.A. Jaecklin ◽

P.R. Palmer ◽

P. Streit

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Impact of dielectric isolation technology on power ICs

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146056 ◽

2002 ◽

Cited By ~ 13

Author(s):

A. Nakagawa

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A 1500 V IGBT with a self-aligned DMOS structure for high resolution CRT operated up to 100 kHz

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146103 ◽

2002 ◽

Cited By ~ 2

Author(s):

M. Mori ◽

Y. Nakano ◽

Y. Yasuda ◽

T. Yatsuo ◽

Y. Sugawara

Keyword(s):

High Resolution

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600 V, 25 A dielectrically-isolated power IC with vertical IGBT

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146062 ◽

2002 ◽

Author(s):

T. Mizoguchi ◽

T. Shirasawa ◽

M. Mori ◽

Y. Sugawara

Keyword(s):

Power Ic

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Extension of RESURF principle to dielectrically isolated power devices

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146059 ◽

2002 ◽

Cited By ~ 66

Author(s):

Y.S. Huang ◽

B.J. Baliga

Keyword(s):

Power Devices

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SIPOS-passivation for high voltage power devices with planar junction termination

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146086 ◽

2002 ◽

Cited By ~ 5

Author(s):

T. Stockmeier ◽

K. Lilja

Keyword(s):

High Voltage ◽

Power Devices ◽

Planar Junction

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[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A novel high voltage three-phase monolithic inverter IC with two current levels sensing

Operation of IGBTs at low temperatures

CMOS compatible 250 V lateral insulated base transistors

An application of MSSD to dielectrically isolated intelligent power IC

Correlation between local segment characteristics and dynamic current redistribution in GTO power thyristors

Impact of dielectric isolation technology on power ICs

A 1500 V IGBT with a self-aligned DMOS structure for high resolution CRT operated up to 100 kHz

600 V, 25 A dielectrically-isolated power IC with vertical IGBT

Extension of RESURF principle to dielectrically isolated power devices

SIPOS-passivation for high voltage power devices with planar junction termination

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs
Latest Publications