p-type c-Si/SnO2/Mg heterojunction solar cells with an induced inversion layer

2021 ◽  
Vol 119 (26) ◽  
pp. 263502
Author(s):  
Qi Wang ◽  
Yurong Zhou ◽  
Wanwu Guo ◽  
Ying Yang ◽  
Jiacheng Shang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Inversion Layer ◽  
Heterojunction Solar Cells ◽  
Type C ◽  
P Type

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1972-1975 ◽  
Author(s):  
Ying Xu ◽  
Zhihua Hu ◽  
Hongwei Diao ◽  
Yi Cai ◽  
Shibin Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nanocrystalline Silicon ◽  
Heterojunction Solar Cells ◽  
Type C ◽  
P Type

Surface charge transfer doping induced inversion layer for high-performance graphene/silicon heterojunction solar cells

2017 ◽  
Vol 5 (1) ◽  
pp. 285-291 ◽  
Author(s):  
Ke Ding ◽  
Xiujuan Zhang ◽  
Feifei Xia ◽  
Rongbin Wang ◽  
Yawei Kuang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
Surface Charge ◽  
High Performance ◽  
Inversion Layer ◽  
Heterojunction Solar Cells ◽  
Device Efficiency ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

Surface charge transfer doping (SCTD) induced p-type inversion layer was implemented in the graphene/silicon heterojunction solar cells, leading to significant improvement of device efficiency.

High-efficiency, hybrid Si/C60 heterojunction solar cells

2016 ◽  
Vol 4 (42) ◽  
pp. 16410-16417 ◽  
Author(s):  
Myoung Hee Yun ◽  
Jae Won Kim ◽  
Song Yi Park ◽  
Dong Suk Kim ◽  
Bright Walker ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Hybrid Solar Cell ◽  
Organic N ◽  
Heterojunction Solar Cells ◽  
Type Silicon ◽  
Type C ◽  
P Type

The first high-efficiency hybrid solar cell of its type comprising p-type silicon with an organic n-type C60 layer is demonstrated.

Numerical simulation for optimization of an ultra-thin n-type WS2/p-type c-Si heterojunction solar cells

2020 ◽  
Vol 178 ◽  
pp. 109600
Author(s):  
Ruiming Huang ◽  
Meng Yu ◽  
Qinru Yang ◽  
Ling Zhang ◽  
Yinghao Wu ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Heterojunction Solar Cells ◽  
Type C ◽  
P Type

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

N-type and P-type C-SI surface passivation by remote PECVD AlOx for solar cells

2010 ◽  
Author(s):  
Quanyuan Shang ◽  
Walter Seaman ◽  
Mike Whitney ◽  
Mark George ◽  
John Madocks ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Type C ◽  
P Type

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

2019 ◽  
Vol 200 ◽  
pp. 109937 ◽  
Author(s):  
Paul Procel ◽  
Philipp Löper ◽  
Felice Crupi ◽  
Christophe Ballif ◽  
Andrea Ingenito
Keyword(s):  
Solar Cells ◽  
Numerical Simulations ◽  
Si Solar Cells ◽  
Type C ◽  
P Type
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