High-efficiency, hybrid Si/C60 heterojunction solar cells

2016 ◽  
Vol 4 (42) ◽  
pp. 16410-16417 ◽  
Author(s):  
Myoung Hee Yun ◽  
Jae Won Kim ◽  
Song Yi Park ◽  
Dong Suk Kim ◽  
Bright Walker ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Hybrid Solar Cell ◽  
Organic N ◽  
Heterojunction Solar Cells ◽  
Type Silicon ◽  
Type C ◽  
P Type

The first high-efficiency hybrid solar cell of its type comprising p-type silicon with an organic n-type C60 layer is demonstrated.

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

scholarly journals Complex Investigation of High Efficiency and Reliable Heterojunction Solar Cell Based on an Improved Cu2O Absorber Layer

Energies ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4667
Author(s):  
Laurentiu Fara ◽  
Irinela Chilibon ◽  
Ørnulf Nordseth ◽  
Dan Craciunescu ◽  
Dan Savastru ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Reliability Analysis ◽  
High Performance ◽  
High Efficiency ◽  
Absorber Layer ◽  
Heterojunction Solar Cell ◽  
Complex Investigation ◽  
Heterojunction Solar Cells ◽  
Conduction Band Offset

This study is aimed at increasing the performance and reliability of silicon-based heterojunction solar cells with advanced methods. This is achieved by a numerical electro-optical modeling and reliability analysis for such solar cells correlated with experimental analysis of the Cu2O absorber layer. It yields the optimization of a silicon tandem heterojunction solar cell based on a ZnO/Cu2O subcell and a c-Si bottom subcell using electro-optical numerical modeling. The buffer layer affinity and mobility together with a low conduction band offset for the heterojunction are discussed, as well as spectral properties of the device model. Experimental research of N-doped Cu2O thin films was dedicated to two main activities: (1) fabrication of specific samples by DC magnetron sputtering and (2) detailed characterization of the analyzed samples. This last investigation was based on advanced techniques: morphological (scanning electron microscopy—SEM and atomic force microscopy—AFM), structural (X-ray diffraction—XRD), and optical (spectroscopic ellipsometry—SE and Fourier-transform infrared spectroscopy—FTIR). This approach qualified the heterojunction solar cell based on cuprous oxide with nitrogen as an attractive candidate for high-performance solar devices. A reliability analysis based on Weibull statistical distribution establishes the degradation degree and failure rate of the studied solar cells under stress and under standard conditions.

Embedding of Carbon Nanotubes on p-Type Silicon for Use in Solar Cells and PV Devices

2008 ◽  
Author(s):  
Abhishek Kumar ◽  
Nikhil Dhawan
Keyword(s):  
Carbon Nanotubes ◽  
Solar Cells ◽  
Solar Cell ◽  
Silicon Wafer ◽  
Three Dimensional ◽  
The Sun ◽  
Future Prospects ◽  
Nanotube Bundles ◽  
Type Silicon ◽  
P Type

Carbon nanotube bundles were precisely grown atop a p-type silicon wafer that had been treated with catalysts to produce geometries that resemble three-dimensional nano-models to extract more power from the sun. The embedded carbon nanotubes bundles on silicon wafer promise more opportunity for each photon of sunlight to interact with resulting solar cell, as a result of increase of surface area available to produce electricity. The paper discusses morphology of grown nanotubes on silicon wafer along with future prospects of Si-CNTs fabricated solar cells.

Novel high-efficiency crystalline-silicon-based compound heterojunction solar cells: HCT (heterojunction with compound thin-layer)

2014 ◽  
Vol 16 (29) ◽  
pp. 15400-15410 ◽  
Author(s):  
Yiming Liu ◽  
Yun Sun ◽  
Wei Liu ◽  
Jianghong Yao
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Thin Layer ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Heterojunction Solar Cell ◽  
Heterojunction Solar Cells ◽  
Silicon Based

A novel high-efficiency c-Si heterojunction solar cell with using compound hetero-materials is proposed and denominated HCT (heterojunction with a compound thin-layer).

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1972-1975 ◽  
Author(s):  
Ying Xu ◽  
Zhihua Hu ◽  
Hongwei Diao ◽  
Yi Cai ◽  
Shibin Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nanocrystalline Silicon ◽  
Heterojunction Solar Cells ◽  
Type C ◽  
P Type

Critical Electric Field of InGaN p-i-n Solar Cell

2013 ◽  
Vol 284-287 ◽  
pp. 1168-1172
Author(s):  
Der Yuh Lin ◽  
Chao Yu Chi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
High Efficiency ◽  
Physical Models ◽  
Electric Field Effect ◽  
Type Layer ◽  
P Type

We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4×1016cm-3and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.

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