Ultrathin atomic layer deposited niobium oxide as a passivation layer in silicon based photovoltaics

2021 ◽  
Vol 130 (21) ◽  
pp. 215301
Author(s):  
Connor J. Leach ◽  
Benjamin E. Davis ◽  
Ben M. Garland ◽  
Ryan Thorpe ◽  
Nicholas C. Strandwitz
Keyword(s):  
Niobium Oxide ◽  
Atomic Layer ◽  
Passivation Layer ◽  
Silicon Based

Thermal stability of atomic-layer-deposited ultra-thin niobium oxide film on Si (100)

2011 ◽  
Vol 257 (16) ◽  
pp. 7305-7309 ◽  
Author(s):  
Yue Huang ◽  
Yan Xu ◽  
Shi-Jin Ding ◽  
Hong-Liang Lu ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Oxide Film ◽  
Niobium Oxide ◽  
Atomic Layer ◽  
Thermal Stability Of

Atomic layer deposited Al2O3 passivation layer for few-layer WS2 field effect transistors

2021 ◽  
Vol 32 (50) ◽  
pp. 505702
Author(s):  
Young Gyu You ◽  
Dong Ho Shin ◽  
Jong Hwa Ryu ◽  
E E B Campbell ◽  
Hyun-Jong Chung ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Passivation Layer

Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer

Langmuir ◽  
2020 ◽  
Vol 36 (44) ◽  
pp. 13144-13154
Author(s):  
Li Zheng ◽  
Wei He ◽  
Valentina Spampinato ◽  
Alexis Franquet ◽  
Stefanie Sergeant ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Passivation Layer ◽  
Layer Deposition ◽  
Octadecyl Silane

In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

2020 ◽  
Vol 12 (14) ◽  
pp. 16639-16647 ◽  
Author(s):  
Alexander C. Kozen ◽  
Zachary R. Robinson ◽  
Evan R. Glaser ◽  
Mark Twigg ◽  
Thomas J. Larrabee ◽  
...  
Keyword(s):  
Niobium Oxide ◽  
Hydrogen Plasma ◽  
Oxide Films ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
Neuromorphic Computing

scholarly journals Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

2020 ◽  
Vol 31 (19) ◽  
pp. 195713 ◽  
Author(s):  
Kaupo Kukli ◽  
Marianna Kemell ◽  
Mikko J Heikkilä ◽  
Helena Castán ◽  
Salvador Dueñas ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Niobium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Oxide Mixture ◽  
Layer Deposition

Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2

2007 ◽  
Vol 996 ◽  
Author(s):  
Takuya Sugawara ◽  
Raghavasimhan Sreenivasan ◽  
Yasuhiro Oshima ◽  
Paul C. McIntyre
Keyword(s):  
Electrical Properties ◽  
Interface Layer ◽  
Hafnium Dioxide ◽  
Passivation Layer ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Interface Layers ◽  
Silicon Based

AbstractGermanium and hafnium-dioxide (HfO2) stack structures' physical and electrical properties were studied based on the comparison of germanium and silicon based metal-oxide-semiconductor (MOS) capacitors' electrical properties. In germanium MOS capacitor with oxide/oxynitride interface layer, larger negative flat-band-voltage (Vfb) shift compared with silicon based MOS capacitors was observed. Secondary ion mass spectrum (SIMS) characteristics of HfO2-germanium stack structure with germanium oxynitride (GeON) interfacial layer showed germanium out diffusion into HfO2. These results indicate that the germanium out diffusion into HfO2 would be the origin of the germanium originated negative Vfb shift. Using Ta3N5 layer as a germanium passivation layer, reduced Vfb shift and negligible hysteresis were observed. These results suggest that the selection of passivation layer strongly influences the electrical properties of germanium based MOS devices.

Sign in / Sign up

Export Citation Format

Share Document