Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy

2021 ◽  
Vol 119 (9) ◽  
pp. 091105
Author(s):  
L. Y. Li ◽  
K. Shima ◽  
M. Yamanaka ◽  
K. Kojima ◽  
T. Egawa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Nonradiative Recombination ◽  
Recombination Rates ◽  
Lattice Matched

Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate

2010 ◽  
Vol 49 (4) ◽  
pp. 040202 ◽  
Author(s):  
Sakuntam Sanorpim ◽  
Ryuji Katayama ◽  
Kentaro Onabe ◽  
Noritaka Usami ◽  
Kazuo Nakajima
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Lattice Matched

Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1-x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy

2021 ◽  
Author(s):  
Shigefusa F. Chichibu ◽  
Hideto MIYAKE ◽  
Akira Uedono
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Si Doping ◽  
Deep Ultraviolet ◽  
Si Doped ◽  
Recombination Centers

Abstract To give a clue for increasing emission efficiencies of Al x Ga1-x N-based deep ultraviolet light emitters, the origins and influences on carrier concentration and minority carrier lifetime (τminority), which determines the internal quantum efficiency, of midgap recombination centers in c-plane Si-doped Al0.60Ga0.40N epilayers and Al0.68Ga0.32N quantum wells (QWs) grown by metalorganic vapor phase epitaxy were studied by temporally and spatially resolved luminescence measurements, making a correlation with the results of positron annihilation measurement. For the Al0.60Ga0.40N epilayers, τminority decreased as the concentration of cation vacancies (VIII) increased, indicating that VIII, most probably decorated with nitrogen vacancies (VN), VIII(VN) n , are major nonradiative recombination centers (NRCs). For heavily Si-doped Al0.60Ga0.40N, a generation of electron-compensating complexes (VIII-SiIII) is suggested. For lightly Si-doping regime, τminority of the QW emission was increased by appropriate Si-doping in the wells, which simultaneously increased the terrace width. The importance of wetting conditions is suggested for decreasing the NRC concentration.

Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy

1994 ◽  
Vol 23 (3) ◽  
pp. 355-358 ◽  
Author(s):  
Makoto Kondo ◽  
Naoko Okada ◽  
Kay Domen ◽  
Katsumi Sugiura ◽  
Chikashi Anayama ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Nonradiative Recombination ◽  
Recombination Centers

Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy

2007 ◽  
Vol 298 ◽  
pp. 111-115 ◽  
Author(s):  
Pornsiri Kongjaeng ◽  
Sakuntam Sanorpim ◽  
Takahisa Yamamoto ◽  
Wataru Ono ◽  
Fumio Nakajima ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Structural Investigation ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Lattice Matched

Effects of lattice-matched InxGa1-xAs substrates on ZnSe growth by metalorganic vapor phase epitaxy

1988 ◽  
Vol 86 (1-4) ◽  
pp. 268-272 ◽  
Author(s):  
Noriyoshi Shibata ◽  
Akira Ohki ◽  
Hideo Nakanishi ◽  
Sakae Zembutsu
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Lattice Matched

TEM investigation of lattice-matched In0.53Ga0.47 as layers grown on InP by low-pressure metalorganic vapor-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 674-675
Author(s):  
C.M. Sung ◽  
KJ. Ostreicher ◽  
M. Abdalla ◽  
D.G. Kenneson ◽  
W. Powazinik ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Communication Systems ◽  
High Mobility ◽  
Lattice Misfit ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Cross Sectional ◽  
Efficient Operation ◽  
Lattice Matched

High-quality defect-free In0.53Ga0.47 As thin film layers lattice matched to InP are important materials for the efficient operation of many optoelectronic devices used in long wavelength communication systems. The presence of defects in these devices is known to have a marked effect on their performance and long-term reliability. The In0.53Ga0.47 As layers reported here were grown by a low-pressure metalorganic vapor phase epitaxy method using tertiarybutylarsine as the As precursor; the layers were found to have high mobility and low background carrier concentrations. The aim of the present work is to investigate the microstructure, ordering, and degree of lattice misfit between the epitaxial In0.53Ga0.47 As layer and the InP using cross-sectional TEM (XTEM) and convergent beam electron diffraction (CBED) methods.A bright-field TEM image (Philips EM400T, 120 keV) taken in the cross-sectional view shows the In0.53Ga0.47As layer, a thin InP buffer layer (≈0.05μm), and the InP (Fe-doped) substrate (Figure 1). The dark cluster-like regions in the InP substrate are Fe-rich (confirmed by EDX).

Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates

2014 ◽  
Vol 7 (9) ◽  
pp. 091001 ◽  
Author(s):  
Takuya Ozaki ◽  
Yoshinori Takagi ◽  
Junichi Nishinaka ◽  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Lattice Matched
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