Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy

1994 ◽  
Vol 23 (3) ◽  
pp. 355-358 ◽  
Author(s):  
Makoto Kondo ◽  
Naoko Okada ◽  
Kay Domen ◽  
Katsumi Sugiura ◽  
Chikashi Anayama ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Nonradiative Recombination ◽  
Recombination Centers

Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1-x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy

2021 ◽  
Author(s):  
Shigefusa F. Chichibu ◽  
Hideto MIYAKE ◽  
Akira Uedono
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Si Doping ◽  
Deep Ultraviolet ◽  
Si Doped ◽  
Recombination Centers

Abstract To give a clue for increasing emission efficiencies of Al x Ga1-x N-based deep ultraviolet light emitters, the origins and influences on carrier concentration and minority carrier lifetime (τminority), which determines the internal quantum efficiency, of midgap recombination centers in c-plane Si-doped Al0.60Ga0.40N epilayers and Al0.68Ga0.32N quantum wells (QWs) grown by metalorganic vapor phase epitaxy were studied by temporally and spatially resolved luminescence measurements, making a correlation with the results of positron annihilation measurement. For the Al0.60Ga0.40N epilayers, τminority decreased as the concentration of cation vacancies (VIII) increased, indicating that VIII, most probably decorated with nitrogen vacancies (VN), VIII(VN) n , are major nonradiative recombination centers (NRCs). For heavily Si-doped Al0.60Ga0.40N, a generation of electron-compensating complexes (VIII-SiIII) is suggested. For lightly Si-doping regime, τminority of the QW emission was increased by appropriate Si-doping in the wells, which simultaneously increased the terrace width. The importance of wetting conditions is suggested for decreasing the NRC concentration.

Growth and Optical Properties of 2D Photonic Crystals Based on Hexagonal GaAs/AlGaAs Pillar Arrays by Selective-Area Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 797 ◽  
Author(s):  
J. Motohisa ◽  
J. Takeda ◽  
M. Inari ◽  
T. Fukui
Keyword(s):  
Photonic Crystals ◽  
Vapor Phase ◽  
Light Emission ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Light Extraction Efficiency ◽  
Nonradiative Recombination ◽  
Selective Area ◽  
Pillar Arrays ◽  
Uniform Array

ABSTRACTWe report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar arrays using selective area (SA) metalorganic vapor phase epitaxy (MOVPE) for the application of two-dimensional photonic crystals (2D-PhCs). SA-MOVPE was carried out on SiO2 masked (111)B GaAs substrates with circular or hexagonal hole openings. Extremely uniform array of hexagonal GaAs/AlGaAs pillars consisting {110} vertical facets with their diameter of order of 200 nm were obtained. Unexpectingly strong intense light emission was observed for the room temperature photoluminescence measurement, which suggests low surface nonradiative recombination and enhancement of the light extraction efficiency of the pillar arrays.

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 97 (1) ◽  
pp. 013502 ◽  
Author(s):  
Kuo-Hua Chang ◽  
Jinn-Kong Sheu ◽  
Ming-Lun Lee ◽  
Shang-Ju Tu ◽  
Chih-Ciao Yang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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