Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes

2021 ◽  
Vol 130 (24) ◽  
pp. 245704
Author(s):  
Manuel Fregolent ◽  
Carlo De Santi ◽  
Matteo Buffolo ◽  
Masataka Higashiwaki ◽  
Gaudenzio Meneghesso ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Thermal Annealing ◽  
Deep Levels ◽  
Schottky Barrier Diodes

scholarly journals Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes

2015 ◽  
Vol 107 (9) ◽  
pp. 093502 ◽  
Author(s):  
Ashutosh Kumar ◽  
M. Latzel ◽  
S. Christiansen ◽  
V. Kumar ◽  
R. Singh
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Barrier Diodes

Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy

2011 ◽  
Vol 1309 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Yoshihiro Irokawa ◽  
Yasunobu Sumida ◽  
Shuichi Yagi ◽  
Hiroji Kawai
Keyword(s):  
Steady State ◽  
Schottky Barrier ◽  
Conduction Band ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Barrier Diodes ◽  
Current Collapse ◽  
Capacitance Voltage ◽  
Capacitance Spectroscopy

ABSTRACTWe have investigated a correlation between electronic deep levels and current collapses in AlGaN/GaN hetero-structures by capacitance-voltage and photo-capacitance spectroscopy techniques, using Schottky barrier diodes. Three specific deep levels located at ~2.07, ~2.80, ~3.23eV below the conduction band were found to be significantly enhanced for the severe current collapse. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapses of the AlGaN/GaN hetero-structures.

Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (100)

2010 ◽  
Vol 492 (1-2) ◽  
pp. 649-655 ◽  
Author(s):  
A. Chawanda ◽  
C. Nyamhere ◽  
F.D. Auret ◽  
W. Mtangi ◽  
M. Diale ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Thermal Annealing ◽  
Schottky Barrier Diodes ◽  
Annealing Behaviour

Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

2020 ◽  
Vol 117 (26) ◽  
pp. 262108
Author(s):  
C. De Santi ◽  
M. Fregolent ◽  
M. Buffolo ◽  
M. H. Wong ◽  
M. Higashiwaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Deep Levels ◽  
Schottky Barrier Diodes ◽  
Nitrogen Implantation ◽  
Carrier Capture

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity

2020 ◽  
Vol 13 (9) ◽  
pp. 096502
Author(s):  
Yu Lu ◽  
Feng Zhou ◽  
Weizong Xu ◽  
Dongsheng Wang ◽  
Yuanyang Xia ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Turn On ◽  
High Uniformity
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