Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range

2018 ◽  
Vol 87 ◽  
pp. 213-221 ◽  
Author(s):  
P. Vigneshwara Raja ◽  
N.V.L. Narasimha Murty
Keyword(s):  
Schottky Barrier ◽  
Thermal Annealing ◽  
Wide Temperature Range ◽  
Schottky Barrier Diodes ◽  
Temperature Range

Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range

2011 ◽  
Vol 109 (5) ◽  
pp. 054502 ◽  
Author(s):  
İlke Taşçıoğlu ◽  
Umut Aydemir ◽  
Şemsettin Altındal ◽  
Barış Kınacı ◽  
Süleyman Özçelik
Keyword(s):  
Schottky Barrier ◽  
Wide Temperature Range ◽  
Reverse Bias ◽  
Schottky Barrier Diodes ◽  
Temperature Range

scholarly journals Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes

2015 ◽  
Vol 107 (9) ◽  
pp. 093502 ◽  
Author(s):  
Ashutosh Kumar ◽  
M. Latzel ◽  
S. Christiansen ◽  
V. Kumar ◽  
R. Singh
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Barrier Diodes

Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes

2021 ◽  
Vol 21 (3) ◽  
pp. 2001-2004
Author(s):  
Seong-Ji Min ◽  
Michael A. Schweitz ◽  
Ngoc Thi Nguyen ◽  
Sang-Mo Koo
Keyword(s):  
Schottky Barrier ◽  
Thermal Sensitivity ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Pin Diode ◽  
Schottky Barrier Diodes ◽  
Saturation Current ◽  
Pin Diodes ◽  
Temperature Range ◽  
Forward Current

We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

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