scholarly journals Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)

2021 ◽  
Vol 119 (15) ◽  
pp. 153504
Author(s):  
H. Tetzner ◽  
I. A. Fischer ◽  
O. Skibitzki ◽  
M. M. Mirza ◽  
C. L. Manganelli ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Current Leakage

Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method

2019 ◽  
Vol 58 (5) ◽  
pp. 050918 ◽  
Author(s):  
Takeaki Hamachi ◽  
Tetsuya Tohei ◽  
Masayuki Imanishi ◽  
Yusuke Mori ◽  
Akira Sakai
Keyword(s):  
Single Crystals ◽  
Threading Dislocations ◽  
Flux Method ◽  
Current Leakage ◽  
Local Current ◽  
Bulk Single Crystals

scholarly journals Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

2014 ◽  
Vol 116 (5) ◽  
pp. 053104 ◽  
Author(s):  
Michael Moseley ◽  
Andrew Allerman ◽  
Mary Crawford ◽  
Jonathan J. Wierer ◽  
Michael Smith ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Electrical Current ◽  
Threading Dislocations ◽  
Current Leakage ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Open Core

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

Degradation Analysis of Thick Film Chip Resistors

2009 ◽  
Author(s):  
Bhanu Sood ◽  
Diganta Das ◽  
Michael H. Azarian ◽  
Michael Pecht
Keyword(s):  
Thick Film ◽  
Printed Circuit Board ◽  
Negative Resistance ◽  
Circuit Board ◽  
High Humidity ◽  
Circuit Boards ◽  
Chemical Modifications ◽  
Current Leakage ◽  
Printed Circuit ◽  
Degradation Analysis

Abstract Negative resistance drift in thick film chip resistors in high temperature and high humidity application conditions was investigated. This paper reports on the investigation of possible causes including formation of current leakage paths on the printed circuit board, delamination between the resistor protective coating and laser trim, and the possibility of silver migration or copper dendrite formation. Analysis was performed on a set of circuit boards exhibiting failures due to this phenomenon. Electrical tests after mechanical and chemical modifications showed that the drift was most likely caused by moisture ingress that created a conductive path across the laser trim.

Misfit and threading dislocations in HgCdTe epitaxy

1986 ◽  
Vol 4 (4) ◽  
pp. 2200-2204 ◽  
Author(s):  
Andrei Szilagyi ◽  
Michael N. Grimbergen
Keyword(s):  
Threading Dislocations

Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

2021 ◽  
Vol 129 (22) ◽  
pp. 225701
Author(s):  
T. Hamachi ◽  
T. Tohei ◽  
Y. Hayashi ◽  
M. Imanishi ◽  
S. Usami ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Bulk Crystals

scholarly journals Dislocation Arrangement in a Thick LEO GaN Film on Sapphire

2000 ◽  
Vol 5 (S1) ◽  
pp. 97-103
Author(s):  
Kathleen A. Dunn ◽  
Susan E. Babcock ◽  
Donald S. Stone ◽  
Richard J. Matyi ◽  
Ling Zhang ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Burgers Vector ◽  
X Ray ◽  
The Third ◽  
Dislocation Arrangement ◽  
Image Position ◽  
Gan Film

Diffraction-contrast TEM, focused probe electron diffraction, and high-resolution X-ray diffraction were used to characterize the dislocation arrangements in a 16µm thick coalesced GaN film grown by MOVPE LEO. As is commonly observed, the threading dislocations that are duplicated from the template above the window bend toward (0001). At the coalescence plane they bend back to lie along [0001] and thread to the surface. In addition, three other sets of dislocations were observed. The first set consists of a wall of parallel dislocations lying in the coalescence plane and nearly parallel to the substrate, with Burgers vector (b) in the (0001) plane. The second set is comprised of rectangular loops with b = 1/3 [110] (perpendicular to the coalescence boundary) which originate in the coalescence boundary and extend laterally into the film on the (100). The third set of dislocations threads laterally through the film along the [100] bar axis with 1/3<110>-type Burgers vectors These sets result in a dislocation density of ∼109 cm−2. High resolution X-ray reciprocal space maps indicate wing tilt of ∼0.5º.

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

2018 ◽  
Vol 123 (16) ◽  
pp. 161551 ◽  
Author(s):  
S. Walde ◽  
M. Brendel ◽  
U. Zeimer ◽  
F. Brunner ◽  
S. Hagedorn ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Metal Semiconductor Metal ◽  
Open Core
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