Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

Jianan Yang; Gerold W. Neudeck; John P. Denton

doi:10.1063/1.1417995

Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1417995 ◽

2002 ◽

Vol 91 (1) ◽

pp. 420 ◽

Cited By ~ 11

Author(s):

Jianan Yang ◽

Gerold W. Neudeck ◽

John P. Denton

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Thin Film Silicon

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Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l855 ◽

1998 ◽

Vol 37 (Part 2, No. 7B) ◽

pp. L855-L858 ◽

Cited By ~ 8

Author(s):

Tran Ngoc Duyet ◽

Hiroki Ishikuro ◽

Makoto Takamiya ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Thin Film Silicon

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Experimental Investigation of Pattern Layout Effect on Radio-Frequency Performance of Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.5691 ◽

2007 ◽

Vol 46 (9A) ◽

pp. 5691-5694 ◽

Cited By ~ 2

Author(s):

Satoshi Matsumoto ◽

Masato Mino

Keyword(s):

Thin Film ◽

Experimental Investigation ◽

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Investigation on the Fully- and Partially-Depleted Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect-Transistors for High-Frequency Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6115 ◽

2000 ◽

Vol 39 (Part 1, No. 11) ◽

pp. 6115-6118 ◽

Cited By ~ 1

Author(s):

Satoshi Matsumoto ◽

Tatsuo Sakai ◽

Toshiaki Yachi

Keyword(s):

Thin Film ◽

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

Rare Metals ◽

10.1007/s12598-020-01586-z ◽

2020 ◽

Author(s):

Yu-Dong Li ◽

Qing-Zhu Zhang ◽

Fan-Yu Liu ◽

Zhao-Hao Zhang ◽

Feng-Yuan Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

X Ray

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Double Gate

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Determination of Flat-Band Voltages for Fully Depleted Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's)

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.2678 ◽

1992 ◽

Vol 31 (Part 1, No. 9A) ◽

pp. 2678-2681 ◽

Cited By ~ 2

Author(s):

Jong-Son Lyu ◽

Kee-Soo Nam ◽

Choochon Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Flat Band ◽

Fully Depleted

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Fabrication of n-channel metal–oxide–semiconductor field-effect transistors with 0.2 μm gate lengths in 500 Å thin film silicon on sapphire

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585950 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2954

Author(s):

P. R. de la Houssaye

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.024106 ◽

2012 ◽

Vol 51 (2R) ◽

pp. 024106 ◽

Cited By ~ 6

Author(s):

Anil Kumar ◽

Tomoko Mizutani ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Gate Length ◽

Fully Depleted ◽

Gate Width ◽

Onset Voltage

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Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.6290 ◽

1998 ◽

Vol 37 (Part 1, No. 12A) ◽

pp. 6290-6294

Author(s):

Yasuhiro Sato ◽

Toshihiko Kosugi ◽

Toshiaki Tsuchiya ◽

Hiromu Ishii

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Drain Region ◽

Ultra Thin Film

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