scholarly journals Formation of thermally grown SiO2/GaN interface

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085020
Author(s):  
Masamichi Akazawa ◽  
Yuya Kitawaki
Keyword(s):  
Thermally Grown

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

Which tool to distinguish transient alumina from alpha alumina in thermally grown alumina scales?

2005 ◽  
Vol 22 (3) ◽  
pp. 527-534 ◽  
Author(s):  
S. Chevalier ◽  
R. Molins ◽  
O. Heintz ◽  
J.P. Larpin
Keyword(s):  
Alumina Scales ◽  
Alpha Alumina ◽  
Thermally Grown

Isothermal transformation behavior of thermally-grown wüstite

2000 ◽  
Vol 17 (2) ◽  
pp. 311-319 ◽  
Author(s):  
B. Gleeson ◽  
S.M.M. Hadavi ◽  
D.J. Young
Keyword(s):  
Isothermal Transformation ◽  
Transformation Behavior ◽  
Thermally Grown

Mobility degradation in gated Si:SiGe quantum wells with thermally grown oxides

1995 ◽  
Vol 31 (21) ◽  
pp. 1876-1878 ◽  
Author(s):  
R.S. Prasad ◽  
S. Kanjanachuchai ◽  
J. Fernández ◽  
T.J. Thornton ◽  
A. Matsumura
Keyword(s):  
Quantum Wells ◽  
Thermally Grown Oxides ◽  
Mobility Degradation ◽  
Thermally Grown

Stress heterogeneity of thermally grown polycrystalline nickel oxide layers

2005 ◽  
Vol 395 (1-2) ◽  
pp. 22-26 ◽  
Author(s):  
X. Milhet ◽  
J. Cormier ◽  
P.O. Renault ◽  
C. Coupeau ◽  
J. Colin
Keyword(s):  
Nickel Oxide ◽  
Polycrystalline Nickel ◽  
Oxide Layers ◽  
Stress Heterogeneity ◽  
Thermally Grown

Tensile stress and creep in thermally grown oxide

2006 ◽  
Vol 5 (5) ◽  
pp. 349-351 ◽  
Author(s):  
Boyd W. Veal ◽  
Arvydas P. Paulikas ◽  
Peggy Y. Hou
Keyword(s):  
Tensile Stress ◽  
Thermally Grown Oxide ◽  
Thermally Grown

Selection and characteristics of peptides that bind thermally grown silicon dioxide films

2005 ◽  
Vol 22 (5-6) ◽  
pp. 201-204 ◽  
Author(s):  
Edward Eteshola ◽  
Leonard J. Brillson ◽  
Stephen Craig Lee
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Thermally Grown
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