The Appearance of Pitting on Thermally Grown Aluminum Oxide caused by Surface Segregation of Fe Impurities from the Bulk

2016 ◽  
Vol 53 (11) ◽  
pp. 681-695
Author(s):  
D. E. Diaz-Droguett ◽  
P. Núñez ◽  
A. L. Cabrera
Keyword(s):  
Aluminum Oxide ◽  
Surface Segregation ◽  
Fe Impurities ◽  
Thermally Grown

Pretreatment effects on the morphology and properties of aluminum oxide thermally grown on NiCoCrAlY

1985 ◽  
Vol 3 (6) ◽  
pp. 2551-2556 ◽  
Author(s):  
S. Prakash ◽  
R. C. Budhani ◽  
H. J. Doerr ◽  
C. V. Deshpandey ◽  
R. F. Bunshah
Keyword(s):  
Aluminum Oxide ◽  
Pretreatment Effects ◽  
Thermally Grown

Formation of Aluminum Oxide Films on Silicon Surface by Aluminum Evaporation in Oxygen Gas Atmosphere

2012 ◽  
Vol 1426 ◽  
pp. 421-426
Author(s):  
Y. Nagatomi ◽  
S. Yoshidomi ◽  
M. Hasumi ◽  
T. Sameshima ◽  
A. Kohno
Keyword(s):  
Aluminum Oxide ◽  
Silicon Surface ◽  
Rear Surface ◽  
Surface Recombination Velocity ◽  
Simple Method ◽  
Effective Lifetime ◽  
Gas Atmosphere ◽  
Metal Evaporation ◽  
Oxygen Gas ◽  
Thermally Grown

ABSTRACTWe report formation of thin aluminum oxide AlOx films on the silicon surface by a simple method of Al metal evaporation in oxygen gas atmosphere. 520 μm thick 30-Ωcm p-type-silicon substrates with a top bare surface and a rear surface coated with 100 nm thick thermally grown SiO2 layers were prepared. AlOx films were formed on the top surfaces by Al metal evaporation up to 20 s in oxygen gas atmosphere at 0.8 Pa with a flow rate of 3 sccm. Samples were subsequently annealed with 9.0x105 Pa H2O vapor at 260°C for 3 h. Measurement of capacitance response to a modulation voltage at 500 kHz as a function of bias gate voltages C-V revealed that AlOx films had the effective oxide thickness ranging from 2.0 and 2.6 nm were formed. C-V measurements also revealed that negative fixed charges were accumulated with a density of 5x1012 cm-2 in AlOx films. Photo-induced carrier microwave absorption measurement resulted in a high minority carrier effective lifetime τeff of 3.6x10-4 s comparable to that of 4.1x10-4 s for thermally grown SiO2 passivation. Field effect passivation was probably caused by negative charges in AlOx so that the surface recombination velocity decreased to 70 cm/s. X-ray reflectivity analysis indicated that the interfacial layer like SiOx was formed between AlOx and Si substrate. High pressure H2O vapor heat annealing caused increase in the density and decrease in the thickness of AlOx layers, although it increased the density and thickness of the interfacial SiOx layer thickness. H2O vapor treatment is effective to improve the quality of nanometer thick AlOxlayer.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

1996 ◽  
Vol 54 ◽  
pp. 490-491
Author(s):  
P.-F. Staub ◽  
C. Bonnelle ◽  
F. Vergand ◽  
P. Jonnard
Keyword(s):  
Electron Probe ◽  
Surface Segregation ◽  
Depth Distribution ◽  
Computing Time ◽  
Depth Resolution ◽  
Physical Parameters ◽  
Electron Probe Analysis ◽  
Interface Phases ◽  
Excitation Conditions ◽  
High Depth

Characterizing dimensionally and chemically nanometric structures such as surface segregation or interface phases can be performed efficiently using electron probe (EP) techniques at very low excitation conditions, i.e. using small incident energies (0.5<E0<5 keV) and low incident overvoltages (1<U0<1.7). In such extreme conditions, classical analytical EP models are generally pushed to their validity limits in terms of accuracy and physical consistency, and Monte-Carlo simulations are not convenient solutions as routine tools, because of their cost in computing time. In this context, we have developed an intermediate procedure, called IntriX, in which the ionization depth distributions Φ(ρz) are numerically reconstructed by integration of basic macroscopic physical parameters describing the electron beam/matter interaction, all of them being available under pre-established analytical forms. IntriX’s procedure consists in dividing the ionization depth distribution into three separate contributions:

Surface segregation in model symmetric polyolefin diblock copolymer melts

1994 ◽  
Vol 4 (12) ◽  
pp. 2231-2248 ◽  
Author(s):  
Mohan Sikka ◽  
Navjot Singh ◽  
Frank S. Bates ◽  
Alamgir Karim ◽  
Sushil Satija ◽  
...  
Keyword(s):  
Diblock Copolymer ◽  
Surface Segregation ◽  
Copolymer Melts

XPS study of the chemisorption induced surface segregation in LaNi5 and ThNi5

1981 ◽  
Vol 42 (7) ◽  
pp. 1025-1028 ◽  
Author(s):  
L. Schlapbach ◽  
C.R. Brundle
Keyword(s):  
Surface Segregation ◽  
Xps Study
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