Non-volatile resistive memory device fabricated from CdSe quantum dot embedded in thermally grown In2O3 nanostructure by oblique angle deposition
2016 ◽
Vol 380
(44)
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pp. 3743-3747
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2013 ◽
Vol 121
(1416)
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pp. 710-713
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2019 ◽
Vol 470
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pp. 943-950
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