scholarly journals Effects of withdrawal speed on the structural, morphological, electrical, and optical properties of CuO thin films synthesized by dip-coating for CO2 gas sensing

AIP Advances ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 115004
Author(s):  
A. M. M. Musa ◽  
S. F. U. Farhad ◽  
M. A. Gafur ◽  
A. T. M. K. Jamil
2007 ◽  
Vol 21 (25) ◽  
pp. 4399-4406 ◽  
Author(s):  
T. M. HAMMAD ◽  
H. M. TAMOUS ◽  
N. K. HEJAZY

In this study, antimony-doped tin oxide (ATO) thin films were fabricated by the sol–gel dip coating process on glass substrates. After the deposition process, the films were treated by Argon–plasma (Ar-400 Watt). The effect of argon–plasma treatments on the electrical and optical properties of ATO thin films was then investigated as a function of the plasma treatment time. It was found that Ar–plasma treatment increased the electrical conductivity of ATO films, but it decreased the optical transmission of ATO thin films.


2017 ◽  
Vol 34 (1) ◽  
pp. 1-8 ◽  
Author(s):  
Libu Manjakkal ◽  
I. Packia Selvam ◽  
S.N. Potty ◽  
R.S. Shinde

Purpose Aluminium-doped zinc oxide thin films exhibit interesting optoelectronic properties, which make them suitable for fabrication of photovoltaic cell, flat panel display electrode, etc. It has been shown that aluminium dopant concentration and annealing treatment in reduced atmosphere are the major factors affecting the electrical and optical properties of aluminium doped zinc oxide (AZO) film. Here, the authors report the structural, optical and electrical properties of aluminium-doped zinc oxide thin films fabricated by dip coating technique and annealed in air atmosphere, thereby avoiding hazardous environments such as hydrogen. The aim of this paper was to systematically investigate the effect of annealing temperature on the electrical properties of dip-coated film. Design/methodology/approach Aluminium-doped ZnO thin films were prepared on corning substrates by dip coating method. Aluminium concentration in the film varied from 0.8 to 1.4 mol per cent. Films have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, UV-visible spectroscopy and Hall measurements. The deposited films were heat treated at 450-600°C, in steps of 50°C for 1 h in air to study the improvement in electrical properties. Films were also prepared by annealing at 600°C in air for durations of 1, 2, 4 and 6 h. Envelope method was used to calculate the variation of the refractive index and extinction coefficient with wavelength. Findings The electrical resistivity is found to decrease considerably when the annealing time is increased from 1 to 4 h. The films exhibited high transmittance (>90 per cent) in the visible range, and the optical band gaps were found to change as per the Moss–Burstien effect, and this was consistent with the observed changes in the carrier concentration. Originality/value The study shows the effect of annealing in air, avoiding hazardous reduced environment, such as hydrogen, to study the improvement in electrical and optical properties of aluminum-doped zinc oxide films. Envelope method was used to calculate the variation of optical constants with wavelength.


2011 ◽  
Author(s):  
Mohd Firdaus Bin Malek ◽  
Mohamad Hafiz Bin Mamat ◽  
Musa Bin Mohamed Zahidi ◽  
Zainizan Bin Sahdan ◽  
Zuraida Binti Khusaimi ◽  
...  

2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  

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