Electrical and Optical Properties of Zinc Oxide Thin Films by Sol-Gel Dip-Coating Technique

2011 ◽  
Author(s):  
Mohd Firdaus Bin Malek ◽  
Mohamad Hafiz Bin Mamat ◽  
Musa Bin Mohamed Zahidi ◽  
Zainizan Bin Sahdan ◽  
Zuraida Binti Khusaimi ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Oxide Thin Films ◽  
Electrical And Optical Properties ◽  
Coating Technique ◽  
Dip Coating Technique

Electrical and optical properties of aluminium doped zinc oxide transparent conducting oxide films prepared by dip coating technique

2017 ◽  
Vol 34 (1) ◽  
pp. 1-8 ◽  
Author(s):  
Libu Manjakkal ◽  
I. Packia Selvam ◽  
S.N. Potty ◽  
R.S. Shinde
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Dip Coating ◽  
Electrical And Optical Properties ◽  
Content Type ◽  
Coating Technique ◽  
Envelope Method ◽  
Dip Coating Technique

Purpose Aluminium-doped zinc oxide thin films exhibit interesting optoelectronic properties, which make them suitable for fabrication of photovoltaic cell, flat panel display electrode, etc. It has been shown that aluminium dopant concentration and annealing treatment in reduced atmosphere are the major factors affecting the electrical and optical properties of aluminium doped zinc oxide (AZO) film. Here, the authors report the structural, optical and electrical properties of aluminium-doped zinc oxide thin films fabricated by dip coating technique and annealed in air atmosphere, thereby avoiding hazardous environments such as hydrogen. The aim of this paper was to systematically investigate the effect of annealing temperature on the electrical properties of dip-coated film. Design/methodology/approach Aluminium-doped ZnO thin films were prepared on corning substrates by dip coating method. Aluminium concentration in the film varied from 0.8 to 1.4 mol per cent. Films have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, UV-visible spectroscopy and Hall measurements. The deposited films were heat treated at 450-600°C, in steps of 50°C for 1 h in air to study the improvement in electrical properties. Films were also prepared by annealing at 600°C in air for durations of 1, 2, 4 and 6 h. Envelope method was used to calculate the variation of the refractive index and extinction coefficient with wavelength. Findings The electrical resistivity is found to decrease considerably when the annealing time is increased from 1 to 4 h. The films exhibited high transmittance (>90 per cent) in the visible range, and the optical band gaps were found to change as per the Moss–Burstien effect, and this was consistent with the observed changes in the carrier concentration. Originality/value The study shows the effect of annealing in air, avoiding hazardous reduced environment, such as hydrogen, to study the improvement in electrical and optical properties of aluminum-doped zinc oxide films. Envelope method was used to calculate the variation of optical constants with wavelength.

Development of highly conductive and transparent copper doped zinc oxide thin films via 2-methoxyethanol modified sol–gel dip-coating technique

2014 ◽  
Vol 40 (1) ◽  
pp. 1927-1932 ◽  
Author(s):  
Hibah A. Al-Khanbashi ◽  
W. Shirbeeny ◽  
A.A. Al-Ghamdi ◽  
Lyudmila M. Bronstein ◽  
Waleed E. Mahmoud
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Sol Gel ◽  
Dip Coating ◽  
Oxide Thin Films ◽  
Coating Technique ◽  
Dip Coating Technique

scholarly journals Electrical and optical properties of dip coated Al-doped ZnO thin films

2021 ◽  
Vol 22 (48) ◽  
Author(s):  
Ram Phul Yadav ◽  
Krishana Bahadur Rai ◽  
Shankar Prasad Shrestha
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Dip Coating ◽  
Oxide Thin Films ◽  
Electrical And Optical Properties ◽  
Starting Solution ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno ◽  
Dip Coating Technique ◽  
Deposited Films

Undoped and Aluminum doped Zinc Oxide thin films were synthesized by dip coating technique. The electrical properties of the films were studied due to the Aluminum doping, starting solution aging and sample aging. The sheet resistance of ZnO:Al films was minimum at 2.5 at % whereas carrier concentration is maximum. Both undoped and aluminum doped Zinc Oxide thin films were found to be highly transparent lying in between 65 - 79 % in the wavelength range 367 nm to 1038 nm. The band gap of deposited films changed slightly from 3.22 eV to 3.27 eV.

Tin-doped indium oxide thin films deposited by sol–gel dip-coating technique

2002 ◽  
Vol 21 (1-2) ◽  
pp. 313-317 ◽  
Author(s):  
K Daoudi ◽  
B Canut ◽  
M.G Blanchin ◽  
C.S Sandu ◽  
V.S Teodorescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Sol Gel ◽  
Dip Coating ◽  
Oxide Thin Films ◽  
Coating Technique ◽  
Dip Coating Technique

Structural and optical properties of Ni doped ZnO thin films using sol–gel dip coating technique

Optik ◽  
2013 ◽  
Vol 124 (15) ◽  
pp. 2023-2027 ◽  
Author(s):  
J. Ramesh ◽  
G. Pasupathi ◽  
R. Mariappan ◽  
V. Senthil Kumar ◽  
V. Ponnuswamy
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Thin Films ◽  
Structural And Optical Properties ◽  
Coating Technique ◽  
Doped Zno ◽  
Dip Coating Technique
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