Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy

2021 ◽  
Vol 130 (10) ◽  
pp. 105703
Author(s):  
Kazutaka Kanegae ◽  
Takafumi Okuda ◽  
Masahiro Horita ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Electron Traps ◽  
Depth Profiles ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Behavior of Electron Traps Induced by Phosphidization and Nitridation of GaAs Surfaces

1998 ◽  
Vol 510 ◽  
Author(s):  
Satoshi Nozu ◽  
Koichiro Matsuda ◽  
Takashi Sugino
Keyword(s):  
Energy Level ◽  
Cross Section ◽  
Capture Cross Section ◽  
Conduction Band Edge ◽  
Capture Cross ◽  
Electron Traps ◽  
Plasma Treatments ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractGaAs is treated with remote PH3 and N2 plasmas. Electron traps induced by plasma treatments are investigated by isothermal capacitance transient spectroscopy measurements. The EL2 trap is detected in the as-grown GaAs. The TP1 trap(Ec-0.26eV) is generated in GaAs phosphidized for 10min, while the TN1 trap(Ec-0.66eV) is induced in GaAs nitrided for 30min. It is found that the TP1 trap is changed to the another trap with an energy level as shallow as 0.16eV below the conduction band edge and a capture cross section as small as 1.8×10−21cm2 by treating with N2 plasma subsequently after PH3 plasma treatment.

Plasma-Induced Electron Traps in n-InP

1995 ◽  
Vol 378 ◽  
Author(s):  
Yoshifumi Sakamoto ◽  
Takashi Sugino ◽  
Koichiro Matsuda ◽  
Junji Shirafuji
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Thermal Annealing ◽  
Hydrogen Plasma ◽  
Hydrogen Atoms ◽  
Plasma Exposure ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractDeep electron traps in n-InP introduced during plasma exposure have been studied by means of isothermal capacitance transient spectroscopy (ICTS). Three electron traps, (Ec–0.21 eV), (Ec–0.34 eV) and (Ec–0.54 eV), which are designated E2, E3 and E4, respectively, are detected in n-InP treated with H2 plasma and by subsequent annealing. The E2 trap is induced by plasma exposure and the E3 trap is produced by thermal annealing. The E4 trap is generated by both plasma exposure and thermal annealing. These three traps are passivated with hydrogen atoms. The E2 trap density near the surface of hydrogen-plasma-treated samples is strongly enhanced by applying electric field because of dissociation of hydrogen from E2 trap. The E2 trap is annealed out with the activation energy of 1.5 eV and the attempt-to-escape frequency of 3.2 × 1014 s−1. Phosphine plasma treatment is effective in suppressing generation of these electron traps.

Electron traps in amorphous In–Ga–Zn–O thin films studied by isothermal capacitance transient spectroscopy

2012 ◽  
Vol 100 (10) ◽  
pp. 102106 ◽  
Author(s):  
Kazushi Hayashi ◽  
Aya Hino ◽  
Shinya Morita ◽  
Satoshi Yasuno ◽  
Hiroshi Okada ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs

1990 ◽  
Vol 67 (3) ◽  
pp. 1380-1383 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Suk‐Ki Min ◽  
Sung Ho Choh ◽  
Susumu Namba
Keyword(s):  
Leakage Current ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Isothermal Capacitance Transient Spectroscopy in ZnO Varistor

1989 ◽  
Vol 28 (Part 2, No. 4) ◽  
pp. L714-L716 ◽  
Author(s):  
Takao Maeda ◽  
Sakae Meguro ◽  
Masasuke Takata
Keyword(s):  
Zno Varistor ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy
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