Electron traps in amorphous In–Ga–Zn–O thin films studied by isothermal capacitance transient spectroscopy

2012 ◽  
Vol 100 (10) ◽  
pp. 102106 ◽  
Author(s):  
Kazushi Hayashi ◽  
Aya Hino ◽  
Shinya Morita ◽  
Satoshi Yasuno ◽  
Hiroshi Okada ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Behavior of Electron Traps Induced by Phosphidization and Nitridation of GaAs Surfaces

1998 ◽  
Vol 510 ◽  
Author(s):  
Satoshi Nozu ◽  
Koichiro Matsuda ◽  
Takashi Sugino
Keyword(s):  
Energy Level ◽  
Cross Section ◽  
Capture Cross Section ◽  
Conduction Band Edge ◽  
Capture Cross ◽  
Electron Traps ◽  
Plasma Treatments ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractGaAs is treated with remote PH3 and N2 plasmas. Electron traps induced by plasma treatments are investigated by isothermal capacitance transient spectroscopy measurements. The EL2 trap is detected in the as-grown GaAs. The TP1 trap(Ec-0.26eV) is generated in GaAs phosphidized for 10min, while the TN1 trap(Ec-0.66eV) is induced in GaAs nitrided for 30min. It is found that the TP1 trap is changed to the another trap with an energy level as shallow as 0.16eV below the conduction band edge and a capture cross section as small as 1.8×10−21cm2 by treating with N2 plasma subsequently after PH3 plasma treatment.

Plasma-Induced Electron Traps in n-InP

1995 ◽  
Vol 378 ◽  
Author(s):  
Yoshifumi Sakamoto ◽  
Takashi Sugino ◽  
Koichiro Matsuda ◽  
Junji Shirafuji
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Thermal Annealing ◽  
Hydrogen Plasma ◽  
Hydrogen Atoms ◽  
Plasma Exposure ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractDeep electron traps in n-InP introduced during plasma exposure have been studied by means of isothermal capacitance transient spectroscopy (ICTS). Three electron traps, (Ec–0.21 eV), (Ec–0.34 eV) and (Ec–0.54 eV), which are designated E2, E3 and E4, respectively, are detected in n-InP treated with H2 plasma and by subsequent annealing. The E2 trap is induced by plasma exposure and the E3 trap is produced by thermal annealing. The E4 trap is generated by both plasma exposure and thermal annealing. These three traps are passivated with hydrogen atoms. The E2 trap density near the surface of hydrogen-plasma-treated samples is strongly enhanced by applying electric field because of dissociation of hydrogen from E2 trap. The E2 trap is annealed out with the activation energy of 1.5 eV and the attempt-to-escape frequency of 3.2 × 1014 s−1. Phosphine plasma treatment is effective in suppressing generation of these electron traps.

Nanoscale Analysis of Defects in Semiconductors and Dielectrics by Means of Charge-transient Spectroscopy/microscopy

2007 ◽  
Vol 1025 ◽  
Author(s):  
Štefan Lányi ◽  
Vojtech Nádaždy ◽  
Miloslav Hruškovic ◽  
Ján Hribik
Keyword(s):  
Thin Films ◽  
Optimal Shape ◽  
Defect Concentration ◽  
Transient Current ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Micrometer Scale ◽  
Defects In Semiconductors ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractWe discuss the possibilities of analysis of electrically active defects in semiconductors and dielectrics by means of Isothermal Capacitance-Transient Spectroscopy and Isothermal Charge-Transient Spectroscopy, applied on sub-micrometer scale. While the first of them utilizes the relaxation of the depletion layer, caused by emission of trapped charges and requires sufficient conductivity, the second directly integrates the transient current and can be applied also to low-conductivity materials like dielectrics.We present some results obtained on pentacene thin films. By means of our charge-transient spectrometer we have achieved a resolution of hundreds of electrons but we believe it can be further improved approximately by one order of magnitude. In materials with relatively high defect concentration, using optimal shape of the probe, a resolution on the order of tens of manometers can be achieved. At low defect concentrations, e.g. in device quality silicon, a resolution on the hundred-nm level is expected.

Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs

1990 ◽  
Vol 67 (3) ◽  
pp. 1380-1383 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Suk‐Ki Min ◽  
Sung Ho Choh ◽  
Susumu Namba
Keyword(s):  
Leakage Current ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Evaluation of Sub-Gap States in Amorphous In-Ga-Zn-O Thin Films Treated with Various Process Conditions

2014 ◽  
Vol 1633 ◽  
pp. 55-60 ◽  
Author(s):  
Kazushi Hayashi ◽  
Aya Hino ◽  
Hiroaki Tao ◽  
Yasuyuki Takanashi ◽  
Shinya Morita ◽  
...  
Keyword(s):  
Thin Films ◽  
Peak Position ◽  
Process Conditions ◽  
Charge Densities ◽  
Capacitance Voltage ◽  
Time Regime ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Gap States ◽  
Capacitance Transient

ABSTRACTIn the present study, the sub-gap states of amorphous In-Ga-Zn-O (a-IGZO) thin films treated with various process conditions have been evaluated by means of capacitance-voltage (C-V) characteristics and isothermal capacitance transient spectroscopy (ICTS). It was found that the space-charge densities of the a-IGZO decreased as the oxygen partial pressure was increased during the sputtering of a-IGZO thin films. The ICTS spectra for the 4, 8, and 12 % samples were similar and the peak positions were found to be around 1 × 10-2 s at 180 K. On the other hand, the peak position for the 20 % sample shifted to a longer time regime and was located at around 2 × 10-1 s at 180 K. The total densities of the traps for the 4, 8, and 12 % samples were calculated to be 5−6 × 1016 cm-3, while that for 20 % was one order of magnitude lower than the others. From Thermal desorption spectrometer, it was found that desorption of Zn atoms started at a temperature higher than 300 °C for the 4 % sample, while desorption of Zn was not observed for the 20 % sample. The introduction of the sub-gap states could be attributed to oxygen-rich and/or Zn-deficient defects in the a-IGZO thin films formed during thermal annealing.

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