Effect of metamaterial engineering on the superconductive properties of ultrathin layers of NbTiN

2021 ◽  
Vol 130 (7) ◽  
pp. 073901
Author(s):  
Vera N. Smolyaninova ◽  
William Korzi ◽  
Grace Yong ◽  
Anne-Marie Valente-Feliciano ◽  
David R. Beverstock ◽  
...  
Keyword(s):  
Ultrathin Layers

ВЛИЯНИЕ ТВЕРДОФАЗНОЙ РЕКРИСТАЛЛИЗАЦИИ С ДВОЙНОЙ ИМПЛАНТАЦИЕЙ НА ПЛОТНОСТЬ СТРУКТУРНЫХ ДЕФЕКТОВ В УЛЬТРАТОНКИХ СЛОЯХ КРЕМНИЯ НА САПФИРЕ

2020 ◽  
Vol 96 (3s) ◽  
pp. 154-159
Author(s):  
Н.Н. Егоров ◽  
С.А. Голубков ◽  
С.Д. Федотов ◽  
В.Н. Стаценко ◽  
А.А. Романов ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Solid Phase ◽  
Modern Method ◽  
Structural Defects ◽  
Structural Quality ◽  
Mos Transistors ◽  
Ultrathin Layers ◽  
Heteroepitaxial Layers ◽  
Xrd And Tem

Высокая плотность структурных дефектов является основной проблемой при изготовлении электроники на гетероструктурах «кремний на сапфире» (КНС). Современный метод получения ультратонких структур КНС с помощью твердофазной эпитаксиальной рекристаллизации позволяет значительно снизить дефектность в гетероэпитаксиальном слое КНС. В данной работе ультратонкие (100 нм) слои КНС были получены путем рекристаллизации и утонения субмикронных (300 нм) слоев кремния на сапфире, обладающих различным структурным качеством. Плотность структурных дефектов в слоях КНС оценивалась с помощью рентгеноструктурного анализа и просвечивающей электронной микроскопии. Кривые качания от дифракционного отражения Si(400), полученные в ω-геометрии, продемонстрировали максимальную ширину на полувысоте пика не более 0,19-0,20° для ультратонких слоев КНС толщиной 100 нм. Формирование структурно совершенного субмикронного слоя КНС 300 нм на этапе газофазной эпитаксии обеспечивает существенное уменьшение плотности дислокаций в ультратонком кремнии на сапфире до значений ~1 • 104 см-1. Тестовые n-канальные МОП-транзисторы на ультратонких структурах КНС характеризовались подвижностью носителей в канале 725 см2 Вс-1. The high density of structural defects is the main problem on the way to the production of electronics on silicon-on-sapphire (SOS) heteroepitaxial wafers. The modern method of obtaining ultrathin SOS wafers is solid-phase epitaxial recrystallization which can significantly reduce the density of defects in the SOS heteroepitaxial layers. In the current work, ultrathin (100 nm) SOS layers were obtained by recrystallization and thinning of submicron (300 nm) SOS layers, which have various structural quality. The density of structural defects in the layers was estimated by using XRD and TEM. Full width at half maximum of rocking curves (ω-geometry) was no more than 0.19-0.20° for 100 nm ultra-thin SOS layers. The structural quality of 300 nm submicron SOS layers, which were obtained by CVD, depends on dislocation density in 100 nm ultrathin layers. The dislocation density in ultrathin SOS layers was reduced by ~1 • 104 cm-1 due to the utilization of the submicron SOS with good crystal quality. Test n-channel MOS transistors based on ultra-thin SOS wafers were characterized by electron mobility in the channel 725 cm2 V-1 s-1.

Poly(methyl-phenylsilylene) Derivatives as Photoconductors

1993 ◽  
Vol 58 (10) ◽  
pp. 2337-2348 ◽  
Author(s):  
Ivan Kmínek ◽  
Stanislav Nešpůrek ◽  
Eduard Brynda ◽  
Jiří Pfleger ◽  
Věra Cimrová ◽  
...  
Keyword(s):  
Spectral Properties ◽  
Long Wavelength ◽  
Langmuir Blodgett ◽  
Ultrathin Layers ◽  
Polar Derivatives ◽  
Derivatives Of

The attachment of long wavelength absorbing π-conjugated chromophores to poly(methyl-phenylsilylene) (PMPSi) via reactions of its formylated derivative is described. Some of the obtained polymers exhibit improved photostability in comparison with the parent polymer. Their spectral properties and photoconductivity are discussed. Ultrathin layers and multilayers were prepared from polar derivatives of PMPSi by the Langmuir-Blodgett technique and their photoconductive behaviour was studied.

Synthesis and size control of Si nanocrystals by SiO/SiO2 superlattices and Er doping

2002 ◽  
Vol 737 ◽  
Author(s):  
J. Heitmann ◽  
D. Kovalev ◽  
M. Schmidt ◽  
L.X. Yi ◽  
R. Scholz ◽  
...  
Keyword(s):  
Phase Separation ◽  
Crystal Size ◽  
Radiative Lifetime ◽  
Size Control ◽  
Luminescence Signal ◽  
Er Doping ◽  
Size Dependent ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Ultrathin Layers

ABSTRACTThe synthesis of nc-Si by reactive evaporation of SiO and subsequent thermal induced phase separation is reported. The size control of nc-Si is realized by evaporation of SiO/SiO2 superlattices. By this method an independent control of crystal size and density is possible. The phase separation of SiO into SiO2 and nc-Si in the limit of ultrathin layers is investigated. Different steps of this phase separation are characterized by photoluminescence, infrared absorption and transmission electron microscopy measurements. The strong room temperature luminescence of nc-Si shows a strong blueshift of the photoluminescence signal from 850 to 750 nm with decreasing crystal size. Several size dependent properties of this luminescence signal, like decreasing radiative lifetime and increasing no-phonon transition properties with decreasing crystal size are in good agreement with the quantum confinement model. Er doping of the nc-Si shows an enhancement of the Er luminescence at 1.54 μm by a factor of 5000 compared to doped SiO2 layers. The decreasing transfer time for the nc-Si to Er transition with decreasing crystal size can be understood as additional proof of increasing recombination probability within the nc-Si for decreasing crystal size.

Plasmonic enhancement of up-conversion in ultrathin layers

2012 ◽  
Author(s):  
C. Andriamiadamanana ◽  
A. Ferrier ◽  
L. Lombez ◽  
A.-L. Joudrier ◽  
N. Naghavi ◽  
...  
Keyword(s):  
Plasmonic Enhancement ◽  
Ultrathin Layers

scholarly journals Simulation of Proton Beam Effects in Thin Insulating Films

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Ljubinko Timotijevic ◽  
Irfan Fetahovic ◽  
Djordje Lazarevic ◽  
Milos Vujisic
Keyword(s):  
Monte Carlo ◽  
Silicon Nitride ◽  
Integrated Circuits ◽  
Silicon Dioxide ◽  
Monte Carlo Simulations ◽  
Proton Energy ◽  
Transport Parameters ◽  
Insulating Layer ◽  
Insulating Films ◽  
Ultrathin Layers

Effects of exposing several insulators, commonly used for various purposes in integrated circuits, to beams of protons have been investigated. Materials considered include silicon dioxide, silicon nitride, aluminium nitride, alumina, and polycarbonate (Lexan). The passage of proton beams through ultrathin layers of these materials has been modeled by Monte Carlo simulations of particle transport. Parameters that have been varied in simulations include proton energy and insulating layer thickness. Materials are compared according to both ionizing and nonionizing effects produced by the passage of protons.

Ultrathin layers for adhesion promotion

2003 ◽  
Vol 137 (1-3) ◽  
pp. 871-872 ◽  
Author(s):  
Gernot Busch ◽  
Evelin Jaehne ◽  
Xuediao Cai ◽  
Sonia Oberoi ◽  
Hans-Juergen P. Adler
Keyword(s):  
Adhesion Promotion ◽  
Ultrathin Layers

scholarly journals Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers

2017 ◽  
Vol 110 (2) ◽  
pp. 021909 ◽  
Author(s):  
A. Hutzler ◽  
C. D. Matthus ◽  
M. Rommel ◽  
L. Frey
Keyword(s):  
Ultrathin Layers

Organic light-emitting diodes with nanostructured fullerene ultrathin layers

2010 ◽  
Vol 405 (1) ◽  
pp. 335-339 ◽  
Author(s):  
Zhaoyue Lü ◽  
Zhenbo Deng ◽  
Jianjie Zheng ◽  
Yuehong Yin ◽  
Yanli Chen ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Ultrathin Layers

Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator

2011 ◽  
Vol 98 (1) ◽  
pp. 012111 ◽  
Author(s):  
Hui Fang ◽  
Morten Madsen ◽  
Carlo Carraro ◽  
Kuniharu Takei ◽  
Ha Sul Kim ◽  
...  
Keyword(s):  
Strain Engineering ◽  
Ultrathin Layers
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