Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.

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ВЛИЯНИЕ ТВЕРДОФАЗНОЙ РЕКРИСТАЛЛИЗАЦИИ С ДВОЙНОЙ ИМПЛАНТАЦИЕЙ НА ПЛОТНОСТЬ СТРУКТУРНЫХ ДЕФЕКТОВ В УЛЬТРАТОНКИХ СЛОЯХ КРЕМНИЯ НА САПФИРЕ

Nanoindustry Russia ◽

10.22184/1993-8578.2020.13.3s.154.159 ◽

2020 ◽

Vol 96 (3s) ◽

pp. 154-159

Author(s):

Н.Н. Егоров ◽

С.А. Голубков ◽

С.Д. Федотов ◽

В.Н. Стаценко ◽

А.А. Романов ◽

...

Keyword(s):

Dislocation Density ◽

Solid Phase ◽

Modern Method ◽

Structural Defects ◽

Structural Quality ◽

Mos Transistors ◽

Ultrathin Layers ◽

Heteroepitaxial Layers ◽

Xrd And Tem

Высокая плотность структурных дефектов является основной проблемой при изготовлении электроники на гетероструктурах «кремний на сапфире» (КНС). Современный метод получения ультратонких структур КНС с помощью твердофазной эпитаксиальной рекристаллизации позволяет значительно снизить дефектность в гетероэпитаксиальном слое КНС. В данной работе ультратонкие (100 нм) слои КНС были получены путем рекристаллизации и утонения субмикронных (300 нм) слоев кремния на сапфире, обладающих различным структурным качеством. Плотность структурных дефектов в слоях КНС оценивалась с помощью рентгеноструктурного анализа и просвечивающей электронной микроскопии. Кривые качания от дифракционного отражения Si(400), полученные в ω-геометрии, продемонстрировали максимальную ширину на полувысоте пика не более 0,19-0,20° для ультратонких слоев КНС толщиной 100 нм. Формирование структурно совершенного субмикронного слоя КНС 300 нм на этапе газофазной эпитаксии обеспечивает существенное уменьшение плотности дислокаций в ультратонком кремнии на сапфире до значений ~1 • 104 см-1. Тестовые n-канальные МОП-транзисторы на ультратонких структурах КНС характеризовались подвижностью носителей в канале 725 см2 Вс-1. The high density of structural defects is the main problem on the way to the production of electronics on silicon-on-sapphire (SOS) heteroepitaxial wafers. The modern method of obtaining ultrathin SOS wafers is solid-phase epitaxial recrystallization which can significantly reduce the density of defects in the SOS heteroepitaxial layers. In the current work, ultrathin (100 nm) SOS layers were obtained by recrystallization and thinning of submicron (300 nm) SOS layers, which have various structural quality. The density of structural defects in the layers was estimated by using XRD and TEM. Full width at half maximum of rocking curves (ω-geometry) was no more than 0.19-0.20° for 100 nm ultra-thin SOS layers. The structural quality of 300 nm submicron SOS layers, which were obtained by CVD, depends on dislocation density in 100 nm ultrathin layers. The dislocation density in ultrathin SOS layers was reduced by ~1 • 104 cm-1 due to the utilization of the submicron SOS with good crystal quality. Test n-channel MOS transistors based on ultra-thin SOS wafers were characterized by electron mobility in the channel 725 cm2 V-1 s-1.

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Poly(methyl-phenylsilylene) Derivatives as Photoconductors

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19932337 ◽

1993 ◽

Vol 58 (10) ◽

pp. 2337-2348 ◽

Cited By ~ 19

Author(s):

Ivan Kmínek ◽

Stanislav Nešpůrek ◽

Eduard Brynda ◽

Jiří Pfleger ◽

Věra Cimrová ◽

...

Keyword(s):

Spectral Properties ◽

Long Wavelength ◽

Langmuir Blodgett ◽

Ultrathin Layers ◽

Polar Derivatives ◽

Derivatives Of

The attachment of long wavelength absorbing π-conjugated chromophores to poly(methyl-phenylsilylene) (PMPSi) via reactions of its formylated derivative is described. Some of the obtained polymers exhibit improved photostability in comparison with the parent polymer. Their spectral properties and photoconductivity are discussed. Ultrathin layers and multilayers were prepared from polar derivatives of PMPSi by the Langmuir-Blodgett technique and their photoconductive behaviour was studied.

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Strain engineering of atomic and electronic structures of few-monolayer-thick GaN

Physical Review Materials ◽

10.1103/physrevmaterials.1.024003 ◽

2017 ◽

Vol 1 (2) ◽

Cited By ~ 10

Author(s):

A. V. Kolobov ◽

P. Fons ◽

Y. Saito ◽

J. Tominaga ◽

B. Hyot ◽

...

Keyword(s):

Electronic Structures ◽

Strain Engineering

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Specialized Metabolites from Ribosome Engineered Strains of Streptomyces clavuligerus

Metabolites ◽

10.3390/metabo11040239 ◽

2021 ◽

Vol 11 (4) ◽

pp. 239

Author(s):

Arshad Ali Shaikh ◽

Louis-Felix Nothias ◽

Santosh K. Srivastava ◽

Pieter C. Dorrestein ◽

Kapil Tahlan

Keyword(s):

In Silico Analysis ◽

Cost Effective ◽

Gene Clusters ◽

Streptomyces Clavuligerus ◽

Strain Engineering ◽

Ribosome Recycling Factor ◽

Metabolic Potential ◽

Putative Gene ◽

Specialized Metabolites ◽

Streptomyces Spp

Bacterial specialized metabolites are of immense importance because of their medicinal, industrial, and agricultural applications. Streptomyces clavuligerus is a known producer of such compounds; however, much of its metabolic potential remains unknown, as many associated biosynthetic gene clusters are silent or expressed at low levels. The overexpression of ribosome recycling factor (frr) and ribosome engineering (induced rpsL mutations) in other Streptomyces spp. has been reported to increase the production of known specialized metabolites. Therefore, we used an overexpression strategy in combination with untargeted metabolomics, molecular networking, and in silico analysis to annotate 28 metabolites in the current study, which have not been reported previously in S. clavuligerus. Many of the newly described metabolites are commonly found in plants, further alluding to the ability of S. clavuligerus to produce such compounds under specific conditions. In addition, the manipulation of frr and rpsL led to different metabolite production profiles in most cases. Known and putative gene clusters associated with the production of the observed compounds are also discussed. This work suggests that the combination of traditional strain engineering and recently developed metabolomics technologies together can provide rapid and cost-effective strategies to further speed up the discovery of novel natural products.

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Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

Nanoscale Research Letters ◽

10.1186/s11671-020-03461-3 ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Yun Li ◽

Xiaobo Li ◽

Shidong Zhang ◽

Liemao Cao ◽

Fangping Ouyang ◽

...

Keyword(s):

Transport Properties ◽

High Performance ◽

Density Functional ◽

Strain Engineering ◽

Molecular Junctions ◽

Spin Splitting ◽

Functional Theory ◽

Spin Dependent Transport ◽

The Density Functional Theory ◽

Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

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Modulation of electronic and magnetic properties of monolayer chromium trihalides by alloy and strain engineering

Journal of Applied Physics ◽

10.1063/5.0045893 ◽

2021 ◽

Vol 129 (15) ◽

pp. 155104

Author(s):

Qian Wang ◽

Nannan Han ◽

Xuyang Zhang ◽

Chenhui Zhang ◽

Xixiang Zhang ◽

...

Keyword(s):

Magnetic Properties ◽

Strain Engineering ◽

Electronic And Magnetic Properties

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Constraint-based metabolic control analysis for rational strain engineering

Metabolic Engineering ◽

10.1016/j.ymben.2021.03.003 ◽

2021 ◽

Author(s):

Sophia Tsouka ◽

Meric Ataman ◽

Tuure Hameri ◽

Ljubisa Miskovic ◽

Vassily Hatzimanikatis

Keyword(s):

Metabolic Control ◽

Strain Engineering ◽

Metabolic Control Analysis ◽

Control Analysis

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Synergistic vacancy defects and mechanical strain for the modulation of the mechanical, electronic and optical properties of monolayer tungsten disulfide

Physical Chemistry Chemical Physics ◽

10.1039/d0cp06336c ◽

2021 ◽

Vol 23 (10) ◽

pp. 6298-6308

Author(s):

Chan Gao ◽

Xiaoyong Yang ◽

Ming Jiang ◽

Lixin Chen ◽

Zhiwen Chen ◽

...

Keyword(s):

Optical Properties ◽

Transition Metal ◽

Mechanical Strain ◽

Transition Metal Dichalcogenides ◽

Strain Engineering ◽

Tungsten Disulfide ◽

Defect Engineering ◽

Vacancy Defects ◽

Electronic And Optical Properties ◽

Metal Dichalcogenides

The combination of defect engineering and strain engineering for the modulation of the mechanical, electronic and optical properties of monolayer transition metal dichalcogenides (TMDs).

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