Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

2021 ◽  
Vol 119 (1) ◽  
pp. 011601
Author(s):  
Guoxiang Wang ◽  
Fen Liu ◽  
Yegang Lu ◽  
Yimin Chen ◽  
Xiang Shen
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Crystallization Mechanism ◽  
Switching Behavior

Understanding the crystallization behavior and structure of titanium addition in germanium antimony phase change thin films

2018 ◽  
Vol 6 (34) ◽  
pp. 9081-9092 ◽  
Author(s):  
Weihua Wu ◽  
Bo Shen ◽  
Jiwei Zhai ◽  
Xinyi Liu ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Change ◽  
Crystallization Behavior ◽  
Crystallization Mechanism ◽  
Phase Transition Behavior ◽  
Titanium Addition ◽  
Transition Behavior

The effects of a titanium dopant on the phase transition behavior and crystallization mechanism of Ge8Sb92 films were systematically investigated.

Reversible Electrical Resistance Switching in GeSbTe Thin Films: An Electrolytic Approach without Amorphous-Crystalline Phase-Change

2008 ◽  
Vol 1071 ◽  
Author(s):  
Ramanathaswamy Pandian ◽  
Bart J. Kooi ◽  
George Palasantzas ◽  
Jeff Th. M. De Hosson
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Phase Change ◽  
Crystalline Phase ◽  
Electrical Resistance ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Conductive Atomic Force Microscopy ◽  
Switching Mechanism ◽  
Starting Point

AbstractBesides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named ‘polarity-dependent resistance (PDR) switching’. The electrical resistance of the film switches between a low- and high-state when the polarity of the applied electric field is reversed. This switching is not connected to the phase-change, as it only occurs in the crystalline phase of the film, but connected to the solid-state electrolytic behavior i.e. high ionic conductivity of (Sb-rich) GeSbTe under an electric field. I-V characteristics of nonoptimized capacitor-like prototype cells of various dimensions clearly exhibited the switching behavior when sweeping the voltage between +1 V and -1 V (starting point: 0 V). The switching was demonstrated also with voltage pulses of amplitudes down to 1 V and pulse widths down to 1 microsecond for several hundred of cycles with resistance contrasts up to 150 % between the resistance states. Conductive atomic force microscopy (CAFM) was used to examine PDR switching at nanoscales in tip-written crystalline marks, where the switching occurred for less than 1.5 V with more than three orders of resistance contrasts. Our experiments demonstrated a novel and technologically important switching mechanism, which consumes less power than the usual phase-change switching and provide opportunity to bring together the two resistance switching types (phase-change and PDR) in a single system to extend the applicability of GeSbTe materials.

scholarly journals Nonvolatile and reconfigurable tuning of surface lattice resonances using phase-change Ge2Sb2Te5 thin films

2021 ◽  
Vol 22 ◽  
pp. 103897
Author(s):  
Xingzhe Shi ◽  
Changshui Chen ◽  
Songhao Liu ◽  
Guangyuan Li
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Surface Lattice

scholarly journals Introduction of Chalcogenide Glasses to Additive Manufacturing: Nanoparticle Ink Formulation, Inkjet Printing, and Phase Change Devices Fabrication

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
A. Ahmed Simon ◽  
B. Badamchi ◽  
H. Subbaraman ◽  
Y. Sakaguchi ◽  
L. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Inkjet Printing ◽  
Chalcogenide Glasses ◽  
Dip Coating ◽  
Potential Applications ◽  
Coating Methods ◽  
Report Data ◽  
Nanoparticle Ink ◽  
Ink Formulation

AbstractChalcogenide glasses are one of the most versatile materials that have been widely researched because of their flexible optical, chemical, electronic, and phase change properties. Their application is usually in the form of thin films, which work as active layers in sensors and memory devices. In this work, we investigate the formulation of nanoparticle ink of Ge–Se chalcogenide glasses and its potential applications. The process steps reported in this work describe nanoparticle ink formulation from chalcogenide glasses, its application via inkjet printing and dip-coating methods and sintering to manufacture phase change devices. We report data regarding nanoparticle production by ball milling and ultrasonication along with the essential characteristics of the formed inks, like contact angle and viscosity. The printed chalcogenide glass films were characterized by Raman spectroscopy, X-ray diffraction, energy dispersive spectroscopy and atomic force microscopy. The printed films exhibited similar compositional, structural, electronic and optical properties as the thermally evaporated thin films. The crystallization processes of the printed films are discussed compared to those obtained by vacuum thermal deposition. We demonstrate the formation of printed thin films using nanoparticle inks, low-temperature sintering and proof for the first time, their application in electronic and photonic temperature sensors utilizing their phase change property. This work adds chalcogenide glasses to the list of inkjet printable materials, thus offering an easy way to form arbitrary device structures for optical and electronic applications.

scholarly journals Reconfigurable Flat Optics with Programmable Reflection Amplitude Using Lithography‐Free Phase‐Change Material Ultra‐Thin Films (Advanced Optical Materials 2/2021)

2021 ◽  
Vol 9 (2) ◽  
pp. 2170006
Author(s):  
Sébastien Cueff ◽  
Arnaud Taute ◽  
Antoine Bourgade ◽  
Julien Lumeau ◽  
Stephane Monfray ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Material ◽  
Optical Materials ◽  
Reflection Amplitude ◽  
Change Material

Multilayer SnSb4–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

2017 ◽  
Vol 9 (32) ◽  
pp. 27004-27013 ◽  
Author(s):  
Ruirui Liu ◽  
Xiao Zhou ◽  
Jiwei Zhai ◽  
Jun Song ◽  
Pengzhi Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Materials ◽  
Enhanced Stability
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