Multilayer SnSb4–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

2017 ◽  
Vol 9 (32) ◽  
pp. 27004-27013 ◽  
Author(s):  
Ruirui Liu ◽  
Xiao Zhou ◽  
Jiwei Zhai ◽  
Jun Song ◽  
Pengzhi Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Materials ◽  
Enhanced Stability

Laser Synthesis of Sn-Ge-Sb-Te Phase Change Materials

2006 ◽  
Vol 918 ◽  
Author(s):  
Wendong Song ◽  
L.P. Shi ◽  
X.S. Miao ◽  
T.C. Chong
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Crystallization Temperature ◽  
Photoelectron Spectroscopy ◽  
Phase Change Materials ◽  
Frequency Factor ◽  
Ramp Rate ◽  
Laser Synthesis ◽  
Si Substrates ◽  
Change Temperature

AbstractSn-doped Ge-Sb-Te films on Si substrates were prepared by laser synthesis at the different growth temperatures. The compositions of Sn-doped Ge-Sb-Te films were analysized by X-ray photoelectron spectroscopy. The crystal structures of Sn-doped Ge-Sb-Te thin films with a Sn content of less than 30 at% are close to Ge2Sb2Te5. The crystallization behaviors of Sn-doped Ge-Sb-Te films were analyzed by self-developed phase change temperature tester. The crystallization temperatures of Sn4.3Ge32.9Sb28.1Te34.6, Sn9.8Ge20.3Sb28.4Te41.5 and Sn18.8Ge19.5Sb25.3Te36.4 are 141.5, 137.3 and 135.0 °C at a ramp rate of 20 °C/min, respectively. Doping Sn into Ge-Sb-Te will result in a decrease of crystallization temperature. It was also found that crystallization temperature increases with an increase of ramp rate for a phase change material. The activity energy Ea and frequency factor ¦Ô for Sn9.8Ge20.3Sb28.4Te41.5 thin films are 2.42 eV and 1.7 × 1026 Hz, respectively. The crystallization speed of Sn-doped Ge-Sb-Te is estimated to be faster than Ge2Sb2Te5.

Structural change with the resistance drift phenomenon in amorphous GeTe phase change materials’ thin films

2015 ◽  
Vol 49 (3) ◽  
pp. 035305 ◽  
Author(s):  
Pierre Noé ◽  
Chiara Sabbione ◽  
Niccolo Castellani ◽  
Guillaume Veux ◽  
Gabriele Navarro ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Change ◽  
Phase Change ◽  
Phase Change Materials

scholarly journals Enhanced temperature stability and exceptionally high electrical contrast of selenium substituted Ge2Sb2Te5 phase change materials

RSC Advances ◽  
2017 ◽  
Vol 7 (28) ◽  
pp. 17164-17172 ◽  
Author(s):  
Christine Koch ◽  
Anna-Lena Hansen ◽  
Torben Dankwort ◽  
Gerrit Schienke ◽  
Melf Paulsen ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Materials ◽  
Temperature Stability ◽  
Crystalline Phases ◽  
Compound Ii

Compared to the pure telluride Ge2Sb2Te5, Ge2Sb2Te4Se (I) and Ge2Sb2Te2Se3 (II) thin films reveal an exceptionally large electrical contrast (increased by factor 100 for compound II) between the amorphous and crystalline phases.

Thickness-dependent Crystallization Behavior of Phase Change Materials

2008 ◽  
Vol 1072 ◽  
Author(s):  
Simone Raoux ◽  
Jean L. Jordan-Sweet ◽  
Andrew J. Kellock
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Phase Change ◽  
Crystallization Behavior ◽  
Phase Change Materials ◽  
Random Access ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Future Technology ◽  
Technology Nodes

ABSTRACTWe have investigated the crystallization behavior of phase change materials as a function of their thickness. Thin films of variable thickness between 1 and 50nm of the phase change materials Ge2Sb2Te5 (GST), N-doped GST (N-GST), Ge15Sb85 (GeSb), Sb2Te, and Ag and In doped Sb2Te (AIST) were deposited by magnetron sputtering, and capped in situ by a 10nm thick Al2O3 film to prevent oxidation. The crystallization behavior of the films was studied using time-resolved X-ray diffraction. For each material we observed a constant crystallization temperature Tx that was comparable to bulk values for films thicker than 10 nm, and an increased Tx when the film thickness was reduced below 10 nm. The thinnest films that showed XRD peaks were 2 nm for GST and N-GST, 1.5 nm for Sb2Te and AgIn-Sb2Te, and 1.3 nm for GeSb. The observed increase in the phase transition temperature with reduced film thickness and the fact that very thin films still show clear phase change properties are indications that Phase Change Random Access Memory technology can be scaled down to several future technology nodes.

Thin Films of Ge–Sb–Te-Based Phase Change Materials: Microstructure and in Situ Transformation

2011 ◽  
Vol 23 (17) ◽  
pp. 3871-3878 ◽  
Author(s):  
Jan Tomforde ◽  
Wolfgang Bensch ◽  
Lorenz Kienle ◽  
Viola Duppel ◽  
Philipp Merkelbach ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Materials

Transient Determination on the Bulk Thermal Conductivity of Sub-Millimeter Thin Films of Composite Phase Change Thermal Interfacial Materials

2019 ◽  
Author(s):  
Yu-Hong Zhang ◽  
Biao Feng ◽  
Jing Tu ◽  
Li-Wu Fan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Phase Change ◽  
Thermal Management ◽  
Phase Change Materials ◽  
Thermal Contact ◽  
Property Data ◽  
Composite Phase Change Materials ◽  
Bulk Thermal Conductivity

Abstract The bulk thermal conductivity of thin films having a sub-millimeter thickness, made of composite phase change materials (PCM) and utilized as an emerging thermal interfacial material (TIM) for thermal management of electronics, was determined using the transient plane source (TPS) technique. The actual bulk thermal conductivity of the thin film samples was obtained by deconvoluting the thermal contact resistance (TCR) during the measurement process, according to the linear relationship between the nominal bulk thermal resistance and the thickness. The slope of the correlation curve is the reciprocal of film sample thermal conductivity and the intercept is the overall TCR. For the PCM35 thin film samples (which melt at around 35 °C) having three nominal thicknesses of 271±1 μm, 460±2 μm and 511±2 μm, the corrected results in the solid and liquid state were found to be approximately 0.487 W/m·K and 0.186 W/m·K, respectively. It was shown that the corrected values are greater than the direct readings from the TPS instrument as the latter involves the effect of TCR across multiple interfaces. The results obtained in this work could serve as reference property data for design of thermal management systems involving such phase change TIM.

scholarly journals Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1247
Author(s):  
Rajkiran Tholapi ◽  
Manon Gallard ◽  
Nelly Burle ◽  
Christophe Guichet ◽  
Stephanie Escoubas ◽  
...  
Keyword(s):  
Thin Films ◽  
Tensile Stress ◽  
Phase Change ◽  
Volume Change ◽  
Phase Change Materials ◽  
Stress Evolution ◽  
Viscosity Increase ◽  
Tentative Model ◽  
Curvature Measurements ◽  
Stress Buildup

Phase change materials are attractive materials for non-volatile memories because of their ability to switch reversibly between an amorphous and a crystal phase. The volume change upon crystallization induces mechanical stress that needs to be understood and controlled. In this work, we monitor stress evolution during crystallization in thin GeTe films capped with SiOx, using optical curvature measurements. A 150 MPa tensile stress buildup is measured when the 100 nm thick film crystallizes. Stress evolution is a result of viscosity increase with time and a tentative model is proposed that renders qualitatively the observed features.

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