Understanding the crystallization behavior and structure of titanium addition in germanium antimony phase change thin films

2018 ◽  
Vol 6 (34) ◽  
pp. 9081-9092 ◽  
Author(s):  
Weihua Wu ◽  
Bo Shen ◽  
Jiwei Zhai ◽  
Xinyi Liu ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Change ◽  
Crystallization Behavior ◽  
Crystallization Mechanism ◽  
Phase Transition Behavior ◽  
Titanium Addition ◽  
Transition Behavior

The effects of a titanium dopant on the phase transition behavior and crystallization mechanism of Ge8Sb92 films were systematically investigated.

Observation of Ge2Sb2Te5 thin film phase transition behavior according to the number of cycles using Transmission Electron Microscope and Scanning Probe Microscope

2006 ◽  
Vol 961 ◽  
Author(s):  
Hyunjung Kim ◽  
Sikyung Choi ◽  
Sukhoon Kang ◽  
Kyuhwan Oh ◽  
Soonyong Kweon
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Electron Microscope ◽  
Phase Change ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Phase Transition Behavior ◽  
Transition Behavior ◽  
Transmission Electron

ABSTRACTRecently, the development of information technology (IT) increases the demands of memory devices. Phase change random access memory (PRAM), based on the reversible phase change of the chalcogenide alloy, Ge2Sb2Te5, is widely regarded as a favourite candidate for the next generation memory. Because of PRAM has a simple cell structure with high scalability; it is non-volatile, has a relatively high read/write operation speed (Â50ns). The PRAM operation relies on the fact that chalcogenide-based materials can be reversible switched from an amorphous phase to a crystalline state by an external electrical current. It is important to study the electrical property with set/reset cycles, since film thickness shrinkage occurs with the phase transition.In this work, we fabricated the 100nm amorphous Ge2Sb2Te5 thin film on TiN/Ti/Si substrate using dc-magnetron sputtering. The 50X50§2 isolated Ge2Sb2Te5 cell was lithographed by the lift-off pattern and wet etching. And TiN top electrode was deposited using pattern align process at room temperature after the SiO2 insulator CMP. Phase transition behavior with the set/reset cycle was observed using I-V measurement and transmission electron microscope (TEM) on isolated Ge2Sb2Te5 cell. The set/reset programming was operated using tungsten SPM tip which was fabricated using focused ion beam (FIB) lithography. I-V curve which was observed by the I-V probe clearly showed that the phase transition was occurred by applying the electric field through the I-V probe. The resistivity difference between amorphous and crystal state was more than 102. After the phase transition, it was also demonstrated with transmission electron microscope (TEM) analysis. For the preparation of TEM specimen of the amorphous and crystalline cell, focused ion beam (FIB) lithography was adopted.

Salt-Dependent Phase Transition Behavior of Doubly Thermoresponsive Poly(sulfobetaine)-Based Diblock Copolymer Thin Films

Langmuir ◽  
2021 ◽  
Author(s):  
Lucas P. Kreuzer ◽  
Tobias Widmann ◽  
Christina Geiger ◽  
Peixi Wang ◽  
Apostolos Vagias ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Diblock Copolymer ◽  
Phase Transition Behavior ◽  
Transition Behavior

Evaluation of Phase Transition Behavior of Ge2Sb2Te5Thin Film for Phase Change Random Access Memory

2007 ◽  
Vol 44 (1) ◽  
pp. 18-22
Author(s):  
Woo-Hyuk Do ◽  
Sung-Soon Kim ◽  
Jun-Hyun Bae ◽  
Jun-Ho Cha ◽  
Kyung-Ho Kim ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Phase Transition Behavior ◽  
Access Memory ◽  
Transition Behavior

Phase transition behavior in thin films of block copolymers by use of immiscible solvent vapors

Soft Matter ◽  
2011 ◽  
Vol 7 (2) ◽  
pp. 443-447 ◽  
Author(s):  
Bokyung Kim ◽  
Sung Woo Hong ◽  
Soojin Park ◽  
Ji Xu ◽  
Sung-Kwon Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Block Copolymers ◽  
Phase Transition Behavior ◽  
Transition Behavior ◽  
Solvent Vapors
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