Graphene-β -Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

2016 ◽  
Vol 28 (48) ◽  
pp. 10725-10731 ◽  
Author(s):  
Wei-Yu Kong ◽  
Guo-An Wu ◽  
Kui-Yuan Wang ◽  
Teng-Fei Zhang ◽  
Yi-Feng Zou ◽  
...  
Keyword(s):  
Uv Photodetector ◽  
Highly Sensitive ◽  
Deep Uv

Highly sensitive and ultrafast deep UV photodetector based on aβ-Ga2O3nanowire network grown by CVD

2016 ◽  
Vol 49 (42) ◽  
pp. 425105 ◽  
Author(s):  
Jianyu Du ◽  
Jie Xing ◽  
Chen Ge ◽  
Hao Liu ◽  
Pengyu Liu ◽  
...  
Keyword(s):  
Uv Photodetector ◽  
Highly Sensitive ◽  
Deep Uv

Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector

2021 ◽  
Vol 118 (21) ◽  
pp. 211906
Author(s):  
Dan Zhang ◽  
Wanmin Lin ◽  
Zhuogeng Lin ◽  
Lemin Jia ◽  
Wei Zheng ◽  
...  
Keyword(s):  
Uv Photodetector ◽  
Deep Uv

A High Performance UV Photodetector from Thin Film Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
Robert D. Mckeag ◽  
Michael D. Whitfield ◽  
Simon Sm Chan ◽  
Lisa Ys Pang ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Quantum Efficiency ◽  
Dark Current ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Uv Photodetector ◽  
Deep Uv

ABSTRACTThin film diamond has been used to fabricate a photodetector which displays high sensitivity to deep UV light, with an external quantum efficiency of greater than one, a dark current of less than 0.1nA and which is near ‘blind’ to visible light.

scholarly journals High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

2017 ◽  
Vol 110 (22) ◽  
pp. 221107 ◽  
Author(s):  
Anamika Singh Pratiyush ◽  
Sriram Krishnamoorthy ◽  
Swanand Vishnu Solanke ◽  
Zhanbo Xia ◽  
Rangarajan Muralidharan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Deep Uv

Highly sensitive positive deep UV resist utilizing a sulfonate acid generator and a tetrahydropyranyl inhibitor

1991 ◽  
Vol 13 (1-4) ◽  
pp. 33-36 ◽  
Author(s):  
Leo Schlegel ◽  
Takumi Ueno ◽  
Hiroshi Shiraishi ◽  
Nobuaki Hayashi ◽  
Takao Iwayanagi
Keyword(s):  
Highly Sensitive ◽  
Deep Uv

Quenching of Persistent Photocurrent in Oxide UV Photodetector

2021 ◽  
Author(s):  
Baoshi Qiao ◽  
Zhenzhong Zhang ◽  
Xiu-Hua Xie ◽  
Binghui Li ◽  
Xing Chen ◽  
...  
Keyword(s):  
Response Speed ◽  
Light Signal ◽  
Slow Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Photoconductive Gain ◽  
Noise Current ◽  
Highly Sensitive ◽  
Weak Light ◽  
Key Parameter

The sensitivity to weak light signal is a key parameter for UV photodetectors. However, highly sensitive device has to suffer slow response speed (with photoconductive gain) or large noise current...

Highly sensitive microresinoid siloxane resist for EB and deep-UV lithography

1991 ◽  
Author(s):  
Satomi Yamazaki ◽  
Shinji Ishida ◽  
Hiroshi Matsumoto ◽  
Naoaki Aizaki ◽  
Naohiro Muramoto ◽  
...  
Keyword(s):  
Uv Lithography ◽  
Highly Sensitive ◽  
Deep Uv
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