Specific cation stoichiometry control of SrMnO3-δ thin films via RHEED oscillations

2021 ◽  
Vol 118 (23) ◽  
pp. 232903
Author(s):  
Qingqing Liu ◽  
Qilan Zhong ◽  
Jiawei Bai ◽  
Jing Yang ◽  
Rong Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Stoichiometry Control

scholarly journals Stoichiometry control and electronic and transport properties of pyrochlore Bi2Ir2O7 thin films

2018 ◽  
Vol 2 (11) ◽  
Author(s):  
W. C. Yang ◽  
Y. T. Xie ◽  
X. Sun ◽  
X. H. Zhang ◽  
K. Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Stoichiometry Control

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

Stoichiometry control mechanisms for bias-sputtered zinc-oxide thin films

1985 ◽  
Vol 63 (6) ◽  
pp. 819-825 ◽  
Author(s):  
M. J. Brett ◽  
R. R. Parsons
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Rf Discharge ◽  
Control Mechanisms ◽  
Transparent Conducting ◽  
Self Bias ◽  
Planar Magnetron ◽  
Stoichiometry Control ◽  
Excess Zinc ◽  
Reactive Gas

We have deposited transparent, conducting ZnO thin films of resistivity 3 × 10−3 Ω∙cm by the technique of DC planar-magnetron sputtering in a reactive Ar–O2 atmosphere, incorporating a reactive gas baffle and substrate RF discharge. The substrate discharge was found to increase the oxygen content of the growing film. Films at low values of the RF-induced substrate self-bias voltage were characterized by a brown colour, resistivities of about 4 × 10−2 Ω∙cm, and composition ZnO0.8. Films at higher bias voltages of −80 V were clear with resistivities of 3 × 10−3 Ω∙cm and a composition approaching stoichiometric ZnO. The oxidation of the films by the RF discharge was shown to occur through preferential resputtering and re-evaporation of excess zinc and by activation and ion-plating of oxygen species. Resputtering and re-evaporation rates were found to be enhanced above that expected for bulk Zn, owing to the loosely bound nature of surface adatoms during film growth.

Stoichiometry control of sputtered CuCl thin films: Influence on ultraviolet emission properties

2006 ◽  
Vol 100 (9) ◽  
pp. 096108 ◽  
Author(s):  
Gomathi Natarajan ◽  
R. T. Rajendra Kumar ◽  
S. Daniels ◽  
D. C. Cameron ◽  
P. J. McNally
Keyword(s):  
Thin Films ◽  
Ultraviolet Emission ◽  
Emission Properties ◽  
Stoichiometry Control

Unleashing Strain Induced Ferroelectricity in Complex Oxide Thin Films via Precise Stoichiometry Control

2016 ◽  
Vol 26 (40) ◽  
pp. 7271-7279 ◽  
Author(s):  
Ryan C. Haislmaier ◽  
Everett D. Grimley ◽  
Michael D. Biegalski ◽  
James M. LeBeau ◽  
Susan Trolier-McKinstry ◽  
...  
Keyword(s):  
Thin Films ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Stoichiometry Control

Grain size and stoichiometry control over RF-sputtered multiferroic BiFeO3 thin films on silicon substrates

2015 ◽  
Vol 589 ◽  
pp. 551-555 ◽  
Author(s):  
Giovanni Drera ◽  
Alessio Giampietri ◽  
Ivano Alessandri ◽  
Elena Magnano ◽  
Federica Bondino ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Silicon Substrates ◽  
Bifeo3 Thin Films ◽  
Multiferroic Bifeo3 ◽  
Stoichiometry Control
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