Stoichiometry control of sputtered CuCl thin films: Influence on ultraviolet emission properties

2006 ◽  
Vol 100 (9) ◽  
pp. 096108 ◽  
Author(s):  
Gomathi Natarajan ◽  
R. T. Rajendra Kumar ◽  
S. Daniels ◽  
D. C. Cameron ◽  
P. J. McNally
Keyword(s):  
Thin Films ◽  
Ultraviolet Emission ◽  
Emission Properties ◽  
Stoichiometry Control

scholarly journals Stoichiometry control and electronic and transport properties of pyrochlore Bi2Ir2O7 thin films

2018 ◽  
Vol 2 (11) ◽  
Author(s):  
W. C. Yang ◽  
Y. T. Xie ◽  
X. Sun ◽  
X. H. Zhang ◽  
K. Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Stoichiometry Control

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

Ultraviolet emission enhancement in ZnO thin films modified by nanocrystalline TiO 2

2017 ◽  
Vol 67 ◽  
pp. 139-144 ◽  
Author(s):  
Gaige Zheng ◽  
Xi Lu ◽  
Liming Qian ◽  
Fenglin Xian
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Ultraviolet Emission ◽  
Emission Enhancement

scholarly journals Effects of applying stress on the electron field emission properties in amorphous carbon thin films

2005 ◽  
Vol 86 (23) ◽  
pp. 232102 ◽  
Author(s):  
C. H. P. Poa ◽  
S. R. P. Silva ◽  
R. G. Lacerda ◽  
G. A. J. Amaratunga ◽  
W. I. Milne ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Carbon Thin Films ◽  
Electron Field Emission Properties

STUDYING STRUCTURAL, OPTICAL, ELECTRICAL, AND SENSING PROPERTIES OF NANOCRYSTALLINE SnO2:Cu FILMS PREPARED BY SOL–GEL METHOD FOR CO GAS SENSOR APPLICATION AT LOW TEMPERATURE

2017 ◽  
Vol 24 (08) ◽  
pp. 1750110 ◽  
Author(s):  
SELMA M. H. AL-JAWAD ◽  
ABDULHUSSAIN K. ELTTAYF ◽  
AMEL S. SABER
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Doping Concentration ◽  
Energy Gap ◽  
Sol Gel ◽  
Ultraviolet Emission ◽  
Rutile Structure ◽  
Cu Doping ◽  
Sensing Properties ◽  
Co Gas

Nanocrystalline SnO2 and SnO2:Cu thin films derived from SnCl[Formula: see text]H2O precursors have been prepared on glass substrates using sol–gel dip-coating technique. The deposited film was [Formula: see text][Formula: see text]nm thick and the films were annealed in air at 500[Formula: see text]C for 1[Formula: see text]h. Structural, optical and sensing properties of the films were studied under different preparation conditions, such as Cu-doping concentration of 2%, 4% and 6[Formula: see text]wt.%. X-ray diffraction studies show the polycrystalline nature with tetragonal rutile structure of SnO2 and Cu:SnO2 thin films. The films have highly preferred orientation along (110). The crystallite size of the prepared samples reduced with increasing Cu-doping concentrations and the addition of Cu as dopants changed the structural properties of the thin films. Surface morphology was determined through scanning electron microscopy and atomic force microscopy. Results show that the particle size decreased as doping concentration increased. The films have moderate optical transmission (up to 82.4% at 800[Formula: see text]nm), and the transmittance, absorption coefficient and energy gap at different Cu-doping concentration were measured and calculated. Results show that Cu-doping decreased the transmittance and energy gap whereas it increased the absorption coefficient. Two peaks were noted with Cu-doping concentration of 0–6[Formula: see text]wt.%; the first peak was positioned exactly at 320[Formula: see text]nm ultraviolet emission and the second was positioned at 430–480[Formula: see text]nm. Moreover, emission bands were noticed in the photoluminescence spectra of Cu:SnO2. The electrical properties of SnO2 films include DC electrical conductivity, showing that the films have two activation energies, namely, [Formula: see text] and [Formula: see text], which increase as Cu-doping concentration increases. Cudoped nanocrystalline SnO2 gas-sensing material has better sensitivity to CO gas compared with pure SnO2.

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