Unleashing Strain Induced Ferroelectricity in Complex Oxide Thin Films via Precise Stoichiometry Control

2016 ◽  
Vol 26 (40) ◽  
pp. 7271-7279 ◽  
Author(s):  
Ryan C. Haislmaier ◽  
Everett D. Grimley ◽  
Michael D. Biegalski ◽  
James M. LeBeau ◽  
Susan Trolier-McKinstry ◽  
...  
Keyword(s):  
Thin Films ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Stoichiometry Control

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

scholarly journals Complex oxide thin films: Pyrochlore, defect fluorite and perovskite model systems for structural, spectroscopic and catalytic studies

2018 ◽  
Vol 452 ◽  
pp. 190-200 ◽  
Author(s):  
Thomas Götsch ◽  
Daniel Hauser ◽  
Norbert Köpfle ◽  
Johannes Bernardi ◽  
Bernhard Klötzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Complex Oxide ◽  
Model Systems ◽  
Oxide Thin Films

scholarly journals Oxygen in Complex Oxide Thin Films Grown by Pulsed Laser Deposition: a Perspective

2019 ◽  
Vol 33 (1) ◽  
pp. 205-212 ◽  
Author(s):  
Gertjan Koster ◽  
Dave H. A. Blank ◽  
Guus A. J. H. M. Rijnders
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Complex Oxide ◽  
Laser Deposition ◽  
Oxygen Stoichiometry ◽  
Oxide Thin Films ◽  
Film Synthesis ◽  
Kinetics Of ◽  
Oxidation Mechanisms

Abstract For thin film synthesis of complex oxides, one of the most important issues has always been how to oxidise the material. For a technique like pulsed laser deposition, a key benefit is the relatively high oxygen background pressure one can operate at, and therefor oxidation should be relatively straightforward. However, understanding the microscopic oxidation mechanisms turns out to be rather difficult. In this perspective, we give a brief overview of the sources of oxidation for complex oxide thin films grown by pulsed laser deposition. While it is clear what these sources are, their role in the kinetics of the formation of the crystal structure and oxygen stoichiometry is not fully understood.

scholarly journals Erratum: Phase transitions via selective elemental vacancy engineering in complex oxide thin films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Sang A. Lee ◽  
Hoidong Jeong ◽  
Sungmin Woo ◽  
Jae-Yeol Hwang ◽  
Si-Young Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Complex Oxide ◽  
Oxide Thin Films

Strain-Driven Self-Assembled Network of Antidots in Complex Oxide Thin Films

Small ◽  
2008 ◽  
Vol 5 (2) ◽  
pp. 265-271 ◽  
Author(s):  
Zorica Konstantinović ◽  
José Santiso ◽  
Lluis Balcells ◽  
Benjamín Martínez
Keyword(s):  
Thin Films ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Self Assembled

Electric-Field Control of Magnetism in Complex Oxide Thin Films

MRS Bulletin ◽  
2008 ◽  
Vol 33 (11) ◽  
pp. 1047-1050 ◽  
Author(s):  
Nicola A. Spaldin ◽  
R. Ramesh
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Electric Fields ◽  
Magnetic Behavior ◽  
Complex Oxide ◽  
Future Research ◽  
Oxide Thin Films ◽  
Field Control ◽  
Magnetoelectric Response ◽  
Review Current

AbstractIn this article, we review current research efforts to control the magnetic behavior of complex oxide thin films using electric fields. After providing fundamental definitions of magnetoelectric response, we survey materials, architectures, and mechanisms that exhibit promise for such electric-field control of magnetism. Finally, we mention ideas for future research and discuss prospects for the field.

scholarly journals Phase transitions via selective elemental vacancy engineering in complex oxide thin films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Sang A. Lee ◽  
Hoidong Jeong ◽  
Sungmin Woo ◽  
Jae-Yeol Hwang ◽  
Si-Young Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Transition Metal Oxides ◽  
Complex Oxides ◽  
Complex Oxide ◽  
Magnetic Phase Transitions ◽  
Defect Engineering ◽  
Oxide Thin Films ◽  
Two Phase ◽  
Experimental Approaches

Abstract Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.

scholarly journals Preparation of High-Tc Complex Oxide Thin Films by MOCVD.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 329-331
Author(s):  
Hiroshi MURAKAMI ◽  
Kazuhiro ENDO ◽  
Sadafumi YOSHIDA ◽  
Isao KUDO ◽  
Yo ICHIKAWA ◽  
...  
Keyword(s):  
Thin Films ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
High Tc
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