Photoluminescence from an emitter layer sandwiched between the stack of metasurfaces

2021 ◽  
Vol 129 (18) ◽  
pp. 183101
Author(s):  
Shunsuke Murai ◽  
Kenichi Agata ◽  
Katsuhisa Tanaka
Keyword(s):  
Emitter Layer

CORRELATION BETWEEN ELECTRIC CHARGING OF THE SAMPLE SURFACE AND KINETICS OF OPTICALLY STIMULATED EXOELECTRON EMISSION (OSEE) FROM CRYOSOLIDIFIED NaCl SOLUTION

1990 ◽  
Vol 04 (03) ◽  
pp. 201-209
Author(s):  
A. GIEROSZYŃSKI
Keyword(s):  
Electric Fields ◽  
Surface Potential ◽  
Surface Region ◽  
Sample Surface ◽  
Exoelectron Emission ◽  
Nacl Solution ◽  
Emitter Surface ◽  
Emitter Layer ◽  
The Relationship ◽  
Kinetics Of

It was found that OSEE kinetics from electron bombarded cryosolidified NaCl solution, depend on electric charging of the sample surface. It was shown that from the relationship between the maximum surface potential and the parameters of OSEE kinetic, intensities of electric fields in the emitter layer could be estimated. It is supposed that nonhomogeneous electric fields existing in the emitter surface region, influence the emission levels responsible for the course of OSEE kinetics.

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

Emitter layer design for high-speed InP HBTs with high reliability

2007 ◽  
Author(s):  
Norihide Kashio ◽  
Kenji Kurishima ◽  
Yoshino K. Fukai ◽  
Shoji Yamahata ◽  
Yasuyuki Miyamoto
Keyword(s):  
High Speed ◽  
High Reliability ◽  
Emitter Layer

Internal Electric Field Caused by the Doping Concentration in the Emitter Layer in p$^+$-n-n$^+$ GaAs Solar Cells

2018 ◽  
Vol 68 (4) ◽  
pp. 381-386
Author(s):  
Mo Geun SO ◽  
Hyun-Jun JO ◽  
Young Hee MUN ◽  
Jong Su KIM* ◽  
Yeongho KIM ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Doping Concentration ◽  
Internal Electric Field ◽  
Emitter Layer

Simulation of a Silicon Heterojunction Solar Cell with a Gradient Doping Emitter Layer

2019 ◽  
Vol 48 (7) ◽  
pp. 4688-4696 ◽  
Author(s):  
Licheng Hao ◽  
Ming Zhang ◽  
Ming Ni ◽  
Xianglong Shen ◽  
Xiaodong Feng
Keyword(s):  
Solar Cell ◽  
Heterojunction Solar Cell ◽  
Emitter Layer ◽  
Silicon Heterojunction Solar Cell
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