Utilization of thin as-deposited amorphous silicon gate/emitter layer in advanced CMOS/BiCMOS processes

1992 ◽  
Vol 39 (5) ◽  
pp. 1262-1265 ◽  
Author(s):  
M. El-Diwany ◽  
M. Brassington
Keyword(s):  
Amorphous Silicon ◽  
Emitter Layer

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

scholarly journals Improverment of electrical and optical properties of doped amorphous silicon layers applied to heterojunction solar cells

2015 ◽  
Vol 18 (3) ◽  
pp. 55-60
Author(s):  
Phuong Hoai Pham ◽  
Trung Quang Tran ◽  
Khoa Dang Pham
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Gas Flow ◽  
High Efficiency ◽  
Short Circuit ◽  
Wide Bandgap ◽  
Electrical And Optical Properties ◽  
Emitter Layer ◽  
Heterojunction Solar Cells

The optimisation of electrical and optical properties of doped amorphous silicon layers (the emitter layer) is the key importance to obtain high efficiency heterojunction (HJ) solar cells. Desired properties for the emitter layer include wide bandgap, low surface and interface recombination, and good doping efficiency. In this study, we report the thinfilm properties of n-doped nc-Si:H emitter layers deposited using RF (13.56 MHz) PECVD, at different SiH4/H2 gas flow ratios, at the same RF power, pressures, and temperatures. Trends relating deposition conditions to relevant film characteristics such as thickness, wide bandgap, crystalline fraction and conductivity are discussed. Finally, the heterojunction solar cells using the optimised parameters for n-doped nc- Si:H layers are fabricated with high short circuit current (17 mA).

Machine learning reveals the complexity of dense amorphous silicon

Nature ◽  
2021 ◽  
Vol 589 (7840) ◽  
pp. 22-23
Author(s):  
Paul F. McMillan
Keyword(s):  
Machine Learning ◽  
Amorphous Silicon

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

ELECTRICAL PROPERTIES AND PHOTOLUMINESCENCE OF AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-663-C4-666
Author(s):  
X. B. Liao ◽  
G. L. Kong ◽  
X. R. Yang ◽  
P. D. Wang ◽  
Y. Q. Chao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon

RAMAN SCATTERING IN ANNEAL STABLE AMORPHOUS SILICON

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-54-C6-56 ◽  
Author(s):  
S. T. Kshirsagar ◽  
J. S. Lannin
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon
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