Rapid β-human chorionic gonadotropin detection in urine with electric-double-layer gated field-effect transistor biosensors and a handheld device

2021 ◽  
Vol 15 (2) ◽  
pp. 024106
Author(s):  
Liang-Wen Liao ◽  
Po-Hsuan Chen ◽  
Shu-Yi Tsai ◽  
Adarsh Tripathi ◽  
Akhil K. Paulose ◽  
...  
Keyword(s):  
Double Layer ◽  
Chorionic Gonadotropin ◽  
Human Chorionic Gonadotropin ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Handheld Device ◽  
Effect Transistor

Demonstration of the enhancement of gate bias and ionic strength in electric-double-layer field-effect-transistor biosensors

2021 ◽  
Vol 334 ◽  
pp. 129567
Author(s):  
Chang-Run Wu ◽  
Shin-Li Wang ◽  
Po-Hsuan Chen ◽  
Yu-Lin Wang ◽  
Yu-Rong Wang ◽  
...  
Keyword(s):  
Ionic Strength ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Bias ◽  
Effect Transistor

scholarly journals Enhancing photoresponse by synergy of electric double layer gate and illumination in single CuTCNQ NW field effect transistors

2018 ◽  
Vol 5 (1) ◽  
Author(s):  
Rabaya Basori
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Transfer Complex ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Electron Hole ◽  
Metal Organic ◽  
Effect Transistor

<p class="BodyText1"><span lang="EN-IN">We report that photoresponse of </span><span lang="EN-US">a single metal-organic charge transfer complex Cu:TCNQ nanowire (NW)</span><span lang="EN-IN"> can be enhanced simultaneously by illumination as well as applying a gate bias in an Electric Double Layer Field Effect Transistor (EDL-FET) configuration fabricated on </span><span lang="EN-US">Cu:TCNQ </span><span lang="EN-IN">as a channel.</span><span lang="EN-IN">It is observed that applying a bias using an EDL gate to a n-channel Cu:TCNQ single NW FET, one can enhance the photoresponse of the Cu:TCNQ substantially over that which arise from the photoconductive response alone. </span><span lang="EN-US">Electron-hole pairs that generate in the NW under illuminated of wavelength 400nm gives rise photo current. Also, electric double layer induce negative charges in the NW channel which effectively increases the carrier concentration, contributing to better response in conduction. </span><span lang="EN-IN">The effect reported here has a generic nature that gives rise to a class of gated photodetectors of different photoresponsive materials.</span></p>

scholarly journals Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

2019 ◽  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Semiconductor Layer ◽  
X Ray ◽  
Channel Layer ◽  
Effect Transistor

The study aimed at the investigation and application of SnS thin film semiconductor as a channel layer semiconductor in the assembly of an electric double layer field effect transistor which is important for the achievement and development of novel device concepts, applications and tuning of physical properties of materials since the reported EDLFET and the modulation of electronic states have so far been realised on oxides, nitrides, carbon nanotubes and organic semiconductor but has been rarely reported for the chalcogenides. Honey was used as a gel like electrolytic gate dielectric to generate an enhanced electric field response over SnS semiconductor channel layer and due to its ability to produces high on-current and low voltage operation while forming an ionic gel-like solution similar to ionic gels which consist of ionic liguids. SnS gated honey Electric double layer field effect transistor was assembled using tin sulphide (SnS) thin film as semiconductor channel layer and honey as gate dielectric. The measured gate capacitance of honey using LCR meter was measured as 2.15 μF/ cm2 while the dielectric constant is 20.50. The semiconductor layer was deposited using Aerosol assisted chemical vapour deposition and annealed in open air at 250 on an etched region about the middle of a 4×4 mm FTO glass substrate with the source and drain electrode region defined by the etching and masking at the two ends of the substrate. Iridium was used as the gate electrode while a copper wire was masked to the source and drain region to create electrode contact. The Profilometry, X-ray diffraction, Scanning electron microscope, Energy dispersive X-ray spectroscopy, Hall Effect measurement and digital multimeters were used to characterise the device. The SnS thin film was found to be polycrystalline consisting of Sn and S elements with define grains, an optical band of 1.42 eV and of 0.4 μm thickness. The transistor operated with a p type channel conductivity in a depletion mode with a field effect mobility of 16.67 cm2/Vs, cut-off voltage of 1.6 V, Drain saturation current of1.35μA, a transconductance of -809.61 nA/V and a sub threshold slope of -1.6 Vdec-1 which is comparable to standard specifications in Electronics Data sheets. Positive gate bias results in a shift in the cut off voltage due to charge trapping in the channel/dielectric interface.

p-type field-effect transistor of NiO with electric double-layer gating

2008 ◽  
Vol 92 (24) ◽  
pp. 242107 ◽  
Author(s):  
Hidekazu Shimotani ◽  
Hirotaka Suzuki ◽  
Kazunori Ueno ◽  
Masashi Kawasaki ◽  
Yoshihiro Iwasa
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
P Type

A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b:4,5-b ′]diselenophene/fullerene double layer

2008 ◽  
Vol 145 (3) ◽  
pp. 114-117 ◽  
Author(s):  
Shohei Kinoshita ◽  
Tomo Sakanoue ◽  
Masayuki Yahiro ◽  
Kazuo Takimiya ◽  
Hideaki Ebata ◽  
...  
Keyword(s):  
Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Effect Transistor
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