Electrical Double Layer Gated Field Effect Transistor Biosensors for the Quantitative Detection of Beta-Human Chorionic Gonadotropin

2019 ◽  
Vol 92 (6) ◽  
pp. 57-60
Author(s):  
Liang-Wen Liao ◽  
Po-Hsuan Chen ◽  
Yu-Lin Wang
Keyword(s):  
Double Layer ◽  
Chorionic Gonadotropin ◽  
Human Chorionic Gonadotropin ◽  
Electrical Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Quantitative Detection ◽  
Beta Human Chorionic Gonadotropin ◽  
Effect Transistor

Demonstration of the enhancement of gate bias and ionic strength in electric-double-layer field-effect-transistor biosensors

2021 ◽  
Vol 334 ◽  
pp. 129567
Author(s):  
Chang-Run Wu ◽  
Shin-Li Wang ◽  
Po-Hsuan Chen ◽  
Yu-Lin Wang ◽  
Yu-Rong Wang ◽  
...  
Keyword(s):  
Ionic Strength ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Bias ◽  
Effect Transistor

Quantitative Detection of Protein Using a Top-gate Carbon Nanotube Field Effect Transistor

2007 ◽  
Vol 111 (24) ◽  
pp. 8667-8670 ◽  
Author(s):  
Masuhiro Abe ◽  
Katsuyuki Murata ◽  
Atsuhiko Kojima ◽  
Yasuo Ifuku ◽  
Mitsuaki Shimizu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Quantitative Detection ◽  
Effect Transistor

scholarly journals Enhancing photoresponse by synergy of electric double layer gate and illumination in single CuTCNQ NW field effect transistors

2018 ◽  
Vol 5 (1) ◽  
Author(s):  
Rabaya Basori
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Transfer Complex ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Electron Hole ◽  
Metal Organic ◽  
Effect Transistor

<p class="BodyText1"><span lang="EN-IN">We report that photoresponse of </span><span lang="EN-US">a single metal-organic charge transfer complex Cu:TCNQ nanowire (NW)</span><span lang="EN-IN"> can be enhanced simultaneously by illumination as well as applying a gate bias in an Electric Double Layer Field Effect Transistor (EDL-FET) configuration fabricated on </span><span lang="EN-US">Cu:TCNQ </span><span lang="EN-IN">as a channel.</span><span lang="EN-IN">It is observed that applying a bias using an EDL gate to a n-channel Cu:TCNQ single NW FET, one can enhance the photoresponse of the Cu:TCNQ substantially over that which arise from the photoconductive response alone. </span><span lang="EN-US">Electron-hole pairs that generate in the NW under illuminated of wavelength 400nm gives rise photo current. Also, electric double layer induce negative charges in the NW channel which effectively increases the carrier concentration, contributing to better response in conduction. </span><span lang="EN-IN">The effect reported here has a generic nature that gives rise to a class of gated photodetectors of different photoresponsive materials.</span></p>

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