scholarly journals Theoretical and experimental study of shear mode bulk acoustic wave transformer based on c-axis zigzag ScAlN multilayer for rectenna application

2021 ◽  
Vol 118 (14) ◽  
pp. 142903
Author(s):  
Sarina Kinoshita ◽  
Takahiko Yanagitani
Keyword(s):  
Experimental Study ◽  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Shear Mode ◽  
Wave Transformer

Shear mode bulk acoustic wave resonator based on c-axis oriented AlN thin film

2008 ◽  
Vol 104 (8) ◽  
pp. 084508 ◽  
Author(s):  
Evgeny Milyutin ◽  
Sandrine Gentil ◽  
Paul Muralt
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Shear Mode ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator

scholarly journals Bulk Acoustic Wave Characteristics of Pseudo Lateral-Field-Excitation on LGT Single Crystal for Liquid Phase Sensing

Sensors ◽  
2019 ◽  
Vol 19 (5) ◽  
pp. 1076 ◽  
Author(s):  
Jiachao Xu ◽  
Tingfeng Ma ◽  
Liang Yan ◽  
Mingfei Wang ◽  
Ji Wang ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Acoustic Wave ◽  
High Performance ◽  
Bulk Acoustic Wave ◽  
Shear Mode ◽  
Crystallographic Axis ◽  
Lateral Field ◽  
Wave Characteristics ◽  
Field Excitation ◽  
The One

In the present study, pseudo lateral-field-excitation (LFE) bulk acoustic wave characteristics on LGT crystals are investigated to increase the sensitivity of LFE devices on the liquid characteristic variations. The cut orientation of LGT crystals for pseudo-LFE is investigated and verified experimentally. For an LFE device in the pseudo-LFE mode, the thickness shear mode wave is excited by the thickness field rather than the lateral field. The present work shows that when the (yxl) 13.8° LGT plate is excited by the electric field parallel to the crystallographic axis x, it operates in the pseudo-LFE mode. Moreover, characteristics of devices including the sensitivity and impedance are investigated. The present work shows that sensitivity of LFE devices to variation of the conductivity and permittivity of the aqueous solution are 9 and 3.2 times higher than those for AT-cut quartz crystal based devices, respectively. Furthermore, it has been found that the sensitivity of the LGT LFE sensor to liquid acoustic viscosity variations is 1.4 times higher than the one for the AT-cut quartz sensor. The results are a critical basis of designing high-performance liquid phase sensors by using pseudo-LFE devices.

Shear mode coupling and properties dispersion in 8GHz range AlN thin film bulk acoustic wave (BAW) resonator

2006 ◽  
Vol 514 (1-2) ◽  
pp. 341-343 ◽  
Author(s):  
F. Martin ◽  
M.-E. Jan ◽  
B. Belgacem ◽  
M.-A. Dubois ◽  
P. Muralt
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Mode Coupling ◽  
Bulk Acoustic Wave ◽  
Shear Mode ◽  
Film Bulk

Influence of Sputtering Pressure for Radio Frequency Magnetron Sputtering (103) Oriented AlN Films on (100) Silicon Substrate

2012 ◽  
Vol 538-541 ◽  
pp. 12-15
Author(s):  
Shih Bin Jhong ◽  
Sean Wu ◽  
Maw Shung Lee
Keyword(s):  
Acoustic Wave ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Silicon Substrate ◽  
Rf Magnetron Sputtering ◽  
Bulk Acoustic Wave ◽  
Shear Mode ◽  
Bulk Acoustic Wave Resonator ◽  
Film Bulk ◽  
Sputtering Pressure

The thin film of (103)-oriented aluminum nitride (AlN) is an attractive piezoelectric material for the applications in film bulk acoustic wave resonator (FBAR) devices. Due to the bulk acoustic wave (BAW) properties of (103) oriented AlN films, it can excite a quasi-shear mode (velocity = 5,957 m/s, K2= 3.8%) that can be used for FBAR liquid sensor and even loss less than the FBAR device with (002) oriented AlN films. In this research, the (103) oriented AlN films were successfully deposited onto (100) silicon substrate by radio frequency (RF) magnetron sputtering. Different sputtering pressures (1m torr, 3m torr, 5m torr, and 7m torr) were discussed in this experiment process. Comparisons were made on their crystalline structures with X-ray diffraction (XRD) and the surface morphologies was investigated by the atomic force microscopy (AFM). The result exhibited the optimal sputtering pressure is 5m torr. The optimal (103) oriented AlN films have the strongest XRD intensity, the smallest full width at half maximum (FWHM) value (0.6°), the largest grain size (15.78nm) and the smooth surface roughness (Ra=3.259nm).

Sign in / Sign up

Export Citation Format

Share Document