scholarly journals Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures

AIP Advances ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 095007
Author(s):  
Cameron J. Kopas ◽  
Justin Gonzales ◽  
Shengke Zhang ◽  
D. R. Queen ◽  
Brian Wagner ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Single Photon ◽  
Microwave Loss ◽  
Thin Film Dielectrics

“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Low Temperatures ◽  
In Situ Raman Spectroscopy ◽  
State Reduction ◽  
In Situ Raman ◽  
Linear Behavior ◽  
Current Voltage ◽  
Solid State Reduction

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Lanthanum Aluminum Oxide Thin-Film Dielectrics from Aqueous Solution

2015 ◽  
Vol 7 (3) ◽  
pp. 1678-1684 ◽  
Author(s):  
Paul N. Plassmeyer ◽  
Kevin Archila ◽  
John F. Wager ◽  
Catherine J. Page
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Aluminum Oxide ◽  
Oxide Thin Film ◽  
Lanthanum Aluminum Oxide ◽  
Thin Film Dielectrics

scholarly journals Tunable high-κ ZrxAl1−xOy thin film dielectrics from all-inorganic aqueous precursor solutions

RSC Advances ◽  
2017 ◽  
Vol 7 (62) ◽  
pp. 39147-39152 ◽  
Author(s):  
K. N. Woods ◽  
E. C. Waddington ◽  
C. A. Crump ◽  
E. A. Bryan ◽  
T. S. Gleckler ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Dielectric Properties ◽  
Aluminum Oxide ◽  
Oxide Thin Film ◽  
Solution Route ◽  
Thin Film Dielectrics ◽  
Film Dielectric ◽  
Inorganic Aqueous Solution

An all-inorganic, aqueous solution route enables facile control of composition and optimization of zirconium aluminum oxide thin film dielectric properties.

Integrated Magnetic Sensing of Electrostatically Actuated Thin-Film Microbridges

2002 ◽  
Vol 729 ◽  
Author(s):  
J. Gaspar ◽  
Haohua Li ◽  
P.P. Freitas ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Counter Electrode ◽  
Spin Valve ◽  
Metal Gate ◽  
Electrostatically Actuated ◽  
Glass Substrates ◽  
Hydrogenated Amorphous ◽  
Bridge Length ◽  
The Magnetic Field

AbstractBilayer microbridges of aluminum and hydrogenated amorphous silicon are fabricated using thin film technology and surface micromachining at low temperatures on glass substrates. The microstructure is electrostatically actuated by applying a voltage between the bridge and a metal gate counter electrode placed beneath it. The movement is measured with a precision close to 0.1 Å by sensing the magnetic field of a permanent magnet, deposited and patterned on top of the microbridge, with an integrated spin valve magnetic sensor. The deflection of the bridge is at the same time monitored using an optical setup. The deflection of the structures is studied as a function of the driving applied gate voltage and bridge length and experimental results are analyzed with an electromechanical model.

The interaction of Al, Ag, Au, and Ti to Pr2O3 thin film dielectrics

2006 ◽  
Vol 26 (5-7) ◽  
pp. 1127-1130 ◽  
Author(s):  
M. Torche ◽  
K. Henkel ◽  
D. Schmeißer
Keyword(s):  
Thin Film ◽  
Thin Film Dielectrics

scholarly journals Enabling remote quantum emission in 2D semiconductors via porous metallic networks

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Jose J. Fonseca ◽  
Andrew L. Yeats ◽  
Brandon Blue ◽  
Maxim K. Zalalutdinov ◽  
Todd Brintlinger ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Laser Excitation ◽  
Single Photon ◽  
Photon Emission ◽  
Metal Films ◽  
Single Photon Emitters ◽  
2D Semiconductors ◽  
Exciton Recombination ◽  
Plasmon Polaritons ◽  
Dimensional Crystal

AbstractHere we report how two-dimensional crystal (2DC) overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in a reverse epitaxial process where initially nanocrystalline Au films gain texture, crystallographically orient with the 2D crystal overlayer, and form an oriented porous metallic network (OPEN) structure in which the 2DC can suspend above or coat the inside of the metal pores. Both laser excitation and exciton recombination in the 2DC semiconductor launch propagating SPPs in the OPEN film. Energy in-/out- coupling occurs at metal pore sites, alleviating the need for dielectric spacers between the metal and 2DC layer. At low temperatures, single-photon emitters (SPEs) are present across an OPEN-WSe2 film, and we demonstrate remote SPP-mediated excitation of SPEs at a distance of 17 μm.

scholarly journals Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Temperature Activation

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

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