GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

Yao Chen; Camille Haller; Wei Liu; Sergey Yu Karpov; Jean-François Carlin; Nicolas Grandjean

doi:10.1063/5.0040326

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

Applied Physics Letters ◽

10.1063/5.0040326 ◽

2021 ◽

Vol 118 (11) ◽

pp. 111102

Author(s):

Yao Chen ◽

Camille Haller ◽

Wei Liu ◽

Sergey Yu Karpov ◽

Jean-François Carlin ◽

...

Keyword(s):

Quantum Wells ◽

Growth Temperature ◽

Critical Role ◽

Nitrogen Vacancies

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Erratum: “The critical role of substrate disorder in valley splitting in Si quantum wells” [Appl. Phys. Lett. 112, 243107 (2018)]

Applied Physics Letters ◽

10.1063/1.5144986 ◽

2020 ◽

Vol 116 (4) ◽

pp. 049901

Author(s):

Samuel F. Neyens ◽

Ryan H. Foote ◽

Brandur Thorgrimsson ◽

T. J. Knapp ◽

Thomas McJunkin ◽

...

Keyword(s):

Quantum Wells ◽

Critical Role ◽

Valley Splitting

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Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2008.11.066 ◽

2009 ◽

Vol 311 (7) ◽

pp. 2002-2005 ◽

Cited By ~ 20

Author(s):

Y. Cordier ◽

N. Baron ◽

S. Chenot ◽

P. Vennéguès ◽

O. Tottereau ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Temperature ◽

Molecular Beam ◽

Critical Role ◽

Strain Engineering

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Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

Journal of Applied Physics ◽

10.1063/1.4967928 ◽

2016 ◽

Vol 120 (22) ◽

pp. 225303 ◽

Cited By ~ 11

Author(s):

Akihiko Yoshikawa ◽

Kazuhide Kusakabe ◽

Naoki Hashimoto ◽

Eun-Sook Hwang ◽

Daichi Imai ◽

...

Keyword(s):

Fine Structure ◽

Quantum Wells ◽

Systematic Study ◽

Growth Temperature ◽

High Growth ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

High Growth Temperature

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The critical role of substrate disorder in valley splitting in Si quantum wells

Applied Physics Letters ◽

10.1063/1.5033447 ◽

2018 ◽

Vol 112 (24) ◽

pp. 243107 ◽

Cited By ~ 9

Author(s):

Samuel F. Neyens ◽

Ryan H. Foote ◽

Brandur Thorgrimsson ◽

T. J. Knapp ◽

Thomas McJunkin ◽

...

Keyword(s):

Quantum Wells ◽

Critical Role ◽

Valley Splitting

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The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

Journal of Applied Physics ◽

10.1063/1.3063698 ◽

2009 ◽

Vol 105 (3) ◽

pp. 033701 ◽

Cited By ~ 44

Author(s):

N. Baron ◽

Y. Cordier ◽

S. Chenot ◽

P. Vennéguès ◽

O. Tottereau ◽

...

Keyword(s):

Electrical Properties ◽

Growth Temperature ◽

Electron Mobility ◽

Critical Role ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Structural And Electrical Properties

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The Role of the SLP in Autism Spectrum Disorder Screening and Assessment

Perspectives on Language Learning and Education ◽

10.1044/lle15.2.50 ◽

2008 ◽

Vol 15 (2) ◽

pp. 50-59 ◽

Cited By ~ 1

Author(s):

Amy Philofsky

Keyword(s):

Language Development ◽

Critical Role ◽

Children With Autism ◽

Autism Spectrum ◽

Children With Asd ◽

Prevalence Estimates ◽

Notable Increase ◽

Screening Assessment ◽

Critical Components

AbstractRecent prevalence estimates for autism have been alarming as a function of the notable increase. Speech-language pathologists play a critical role in screening, assessment and intervention for children with autism. This article reviews signs that may be indicative of autism at different stages of language development, and discusses the importance of several psychometric properties—sensitivity and specificity—in utilizing screening measures for children with autism. Critical components of assessment for children with autism are reviewed. This article concludes with examples of intervention targets for children with ASD at various levels of language development.

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