Thermal conductivity of ThO2: Effect of point defect disorder

2021 ◽  
Vol 129 (7) ◽  
pp. 075102
Author(s):  
W. Ryan Deskins ◽  
Ahmed Hamed ◽  
Tomohisa Kumagai ◽  
Cody A. Dennett ◽  
Jie Peng ◽  
...  
2010 ◽  
Vol 107 (11) ◽  
pp. 113903 ◽  
Author(s):  
M. Sirena ◽  
A. Zimmers ◽  
N. Haberkorn ◽  
E. Kaul ◽  
L. B. Steren ◽  
...  

2009 ◽  
Vol 23 (31n32) ◽  
pp. 3869-3876 ◽  
Author(s):  
HYEON-KEUN LEE ◽  
DO KYUNG KIM

Calcium fluoride additive was used to produce high thermal conductivity AlN ceramics which has no grain boundary phase. Thermal conductivity of AlN is determined by the point defect, represented as oxygen related defect, within the AlN grain. The defect density characterization of high thermal conductivity CaF 2 doped AlN ceramics after heat treatment was conducted by Raman spectroscopy. As measure Raman linewidth broadening, the point defect density variation after heat treatment and corresponding thermal conductivity change was investigated.


2020 ◽  
Vol 58 (10) ◽  
pp. 721-727
Author(s):  
Yerim Yang ◽  
TaeWan Kim ◽  
Seokown Hong ◽  
Jiwoo An ◽  
Sang-il Kim

In this study, we report the influence of Te vacancy formation on the thermoelectric properties of n-type Cu0.008Bi2Te2.7Se0.3 alloys, including their electronic and thermal transport properties. Te-deficient Cu0.008Bi2Te2.7-xSe0.3 (x = 0, 0.005, 0.01 and 0.02) samples were systematically synthesized and characterized. Regarding electronic transport properties, carrier concentration was increased with Te vacancies, while carrier mobility was maintained. As a result, the electrical conductivity significantly increased while the Seebeck coefficient reduced moderately, thus, the power factor was enhanced from 3.04 mW/mK<sup>2</sup> (pristine) to 3.22 mW/mK<sup>2</sup> (x = 0.02) at 300 K. Further analysis based on a single parabolic band model revealed that the weighted mobility of the conduction band increased, which is favorable for electron transport, as Te vacancies were generated. Regarding thermal transport properties, lattice thermal conductivity decreased with Te vacancies due to additional point defect phonon scattering, however, total thermal conductivity increased due to larger electronic contribution as Te vacancies increased. Analysis using the Debye-Callaway model suggests that the phonon scattering by the Te vacancies is as efficient as the substitution point defect scattering. Consequently, the thermoelectric figure of merit zT increased at all temperatures for x = 0.005 and 0.01. The maximum zT of 0.95 was achieved for Te-deficient Cu0.008Bi2Te2.69Se0.3 (x = 0.01) at 400 K.


2017 ◽  
Vol 46 (12) ◽  
pp. 3906-3914 ◽  
Author(s):  
Felix Böcher ◽  
Sean P. Culver ◽  
Jan Peilstöcker ◽  
Kai S. Weldert ◽  
Wolfgang G. Zeier

Ag vacancies in AgBiSe2 influence Ag–Bi anti-site disorder and provide point defect scattering, reducing the lattice thermal conductivity.


Author(s):  
Abraham M. Greenstein ◽  
Yeny C. Hudiono ◽  
Samuel Graham ◽  
Sankar Nair

The thermal conductivity of zeolite MFI is modeled for different silicon/aluminum ratios using lattice dynamics and relaxation time theory. The model uses the actual phonon dispersions, Slack’s model for phonon-phonon scattering, a slightly modified form of Klemens’s model for point defect scattering, and a boundary scattering term. Our results strongly suggest that the upper limit of thermal conductivity is defined by boundary-like scattering associated with the pore structure of the material. Below this limit, silicon substitution with aluminum allows effective suppression of the thermal conductivity by point defect scattering and phonon slowing mechanisms.


2017 ◽  
Vol 29 (22) ◽  
pp. 9859-9859
Author(s):  
Chan-Chieh Lin ◽  
Lydia Rathnam ◽  
Jae Hyun Yun ◽  
Ho Seong Lee ◽  
Jong-Soo Rhyee

2018 ◽  
Vol 47 (8) ◽  
pp. 2575-2580 ◽  
Author(s):  
Y. Goto ◽  
A. Nishida ◽  
H. Nishiate ◽  
M. Murata ◽  
C. H. Lee ◽  
...  

Reduced lattice thermal conductivity of Te-substituted AgBiSe2was qualitatively described using the point defect scattering model.


2011 ◽  
Vol 59 (10) ◽  
pp. 3841-3850 ◽  
Author(s):  
Zhixue Qu ◽  
Taylor D. Sparks ◽  
Wei Pan ◽  
David R. Clarke

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