Vacancy and anti-site disorder scattering in AgBiSe2 thermoelectrics

2017 ◽  
Vol 46 (12) ◽  
pp. 3906-3914 ◽  
Author(s):  
Felix Böcher ◽  
Sean P. Culver ◽  
Jan Peilstöcker ◽  
Kai S. Weldert ◽  
Wolfgang G. Zeier

Ag vacancies in AgBiSe2 influence Ag–Bi anti-site disorder and provide point defect scattering, reducing the lattice thermal conductivity.

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Chen Chen ◽  
Zhenzhen Feng ◽  
Honghao Yao ◽  
Feng Cao ◽  
Bing-Hua Lei ◽  
...  

AbstractThe Zintl thermoelectric phase Eu2ZnSb2 has a remarkable combination of high mobility and low thermal conductivity that leads to good thermoelectric performance. The key feature of this compound is a crystal structure that has a Zn-site with a 50% occupancy. Here we use comparison of experimental thermal conductivity measurements and first principles thermal conductivity calculations to characterize the thermal conductivity reduction. We find that partial ordering, characterized by local order, but Zn-site disorder on longer scales, leads to an intrinsic nanostructuring induced reduction in thermal conductivity, while retaining electron mobility. This provides a direction for identifying Zintl compounds with ultralow lattice thermal conductivity and good electrical conductivity.


2017 ◽  
Vol 29 (22) ◽  
pp. 9859-9859
Author(s):  
Chan-Chieh Lin ◽  
Lydia Rathnam ◽  
Jae Hyun Yun ◽  
Ho Seong Lee ◽  
Jong-Soo Rhyee

2018 ◽  
Vol 47 (8) ◽  
pp. 2575-2580 ◽  
Author(s):  
Y. Goto ◽  
A. Nishida ◽  
H. Nishiate ◽  
M. Murata ◽  
C. H. Lee ◽  
...  

Reduced lattice thermal conductivity of Te-substituted AgBiSe2was qualitatively described using the point defect scattering model.


RSC Advances ◽  
2019 ◽  
Vol 9 (54) ◽  
pp. 31747-31752 ◽  
Author(s):  
Min Li ◽  
Yong Luo ◽  
Xiaojuan Hu ◽  
Zhongkang Han ◽  
Xianglian Liu ◽  
...  

Co-regulation of both the copper vacancy concentration (Vc) and point defect GaIn realizing the high carrier concentration and low lattice thermal conductivity in Cu3In5Te9-based chalcogenides simultaneously.


2017 ◽  
Vol 29 (12) ◽  
pp. 5344-5352 ◽  
Author(s):  
Chan-Chieh Lin ◽  
R. Lydia ◽  
Jae Hyun Yun ◽  
Ho Seong Lee ◽  
Jong Soo Rhyee

2020 ◽  
Vol 10 (5) ◽  
pp. 602-609
Author(s):  
Adil H. Awad

Introduction: A new approach for expressing the lattice thermal conductivity of diatomic nanoscale materials is developed. Methods: The lattice thermal conductivity of two samples of GaAs nanobeam at 4-100K is calculated on the basis of monatomic dispersion relation. Phonons are scattered by nanobeam boundaries, point defects and other phonons via normal and Umklapp processes. Methods: A comparative study of the results of the present analysis and those obtained using Callaway formula is performed. We clearly demonstrate the importance of the utilised scattering mechanisms in lattice thermal conductivity by addressing the separate role of the phonon scattering relaxation rate. The formulas derived from the correction term are also presented, and their difference from Callaway model is evident. Furthermore their percentage contribution is sufficiently small to be neglected in calculating lattice thermal conductivity. Conclusion: Our model is successfully used to correlate the predicted lattice thermal conductivity with that of the experimental observation.


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