Investigation of the effect of the plasma deposition process regime parameters on the porosity of coatings

2021 ◽  
Author(s):  
I. N. Kravchenko ◽  
A. L. Galinovsky ◽  
S. V. Kartsev ◽  
V. M. Korneev ◽  
S. K. Toygambaev ◽  
...  
Keyword(s):  
Plasma Deposition ◽  
Deposition Process ◽  
Porosity Of Coatings ◽  
Process Regime

Growth Mechanism and Film Properties in Pulsed Laser-Plasma Deposition

1991 ◽  
Vol 236 ◽  
Author(s):  
S. Metev ◽  
K. Meteva
Keyword(s):  
Laser Plasma ◽  
Growth Process ◽  
Plasma Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Experimental Investigations ◽  
Direct Relation ◽  
Film Properties ◽  
Experimental Conditions ◽  
Laser Flux

AbstractIn the paper the results of a theoretical investigation of the growth process of laser-plasma deposited thin films are discussed. A kinetic approach has been used to establish direct relation between experimental conditions (laser flux density, substrate temperature) and film properties (thickness, structure). The results of some experimental investigations of the deposition process are presented confirming the general conclusions of the developed theoretical model.

Radiative wafer heating during plasma deposition process

2007 ◽  
Vol 25 (3) ◽  
pp. 508-513 ◽  
Author(s):  
R. C. M. Bosch ◽  
C. H. Kant ◽  
A. J. M. van Erven ◽  
W. T. M. Stals ◽  
M. D. Bijker
Keyword(s):  
Plasma Deposition ◽  
Deposition Process

Surface Analysis of Amorphous Carbon Thin Film for Etch Hard Mask

2021 ◽  
Vol 21 (3) ◽  
pp. 2032-2038
Author(s):  
Kwang Pyo Kim ◽  
Wan Soo Song ◽  
Min Kyu Park ◽  
Sang Jeen Hong
Keyword(s):  
Aspect Ratio ◽  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Plasma Deposition ◽  
Process Condition ◽  
Deposition Process ◽  
Chamber Pressure ◽  
Hydrogen Atoms ◽  
Silicon Dioxide Film ◽  
Hard Mask

When the aspect ratio of a high aspect ratio (HAR) etching process is greatly increased, an amorphous carbon layer (ACL) hard mask is required for dynamic random-access memory (DRAM). To improve the durability of an etch hard mask, an understanding of the plasma deposition mechanisms and the deposited film properties associated with the plasma conditions and atomic structure, respectively, is required. We performed a series of plasma depositions, material characterizations and dry-etching to investigate the effect of the deposition process condition on the surface characteristics of an ACL film to be used as a dry etch hard mask in an HAR etch process. We found that a lower chamber pressure at a higher temperature for the plasma deposition process yielded higher film hardness, and this infers that higher plasma ion energy in lower pressure regions helps to remove hydrogen atoms from the surface by increased ion bombardment. It was postulated that a higher substrate temperature gears the bake-out of hydrogen or hydroxide contaminants. From the results of inductively coupled plasma-reactive ion etching of the deposited ACL film, we observed that the etch selectivity over the silicon dioxide film was improved as C═C sp2 and C–C sp3 bonds increased.

Improved GZO Thin Film Properties with SiOx Buffer Layer by Atmospheric Pressure Plasma Deposition

2014 ◽  
Vol 625 ◽  
pp. 196-200
Author(s):  
Kuo Hui Yang ◽  
Po Ching Ho ◽  
Je Wei Lin ◽  
Ta Hsin Chou ◽  
Kow Ming Chang
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Atmospheric Pressure ◽  
Plasma Deposition ◽  
Atmospheric Pressure Plasma ◽  
Deposition Process ◽  
Good Alternative ◽  
Pressure Plasma ◽  
Electro Optic ◽  
Single Jet

The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiOx could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiOx deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm2. GZO thin film with SiOx buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiOx/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.

Development of Ultra-Clean Plasma Deposition Process

1999 ◽  
Vol 557 ◽  
Author(s):  
Toshihiro Kamei ◽  
Akihisa Matsuda
Keyword(s):  
Grain Size ◽  
Secondary Ion Mass Spectrometry ◽  
Plasma Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Ultra High Vacuum ◽  
Very High Frequency ◽  
Microscopic Mechanism ◽  
O 10

AbstractWe have developed a new type of ultra-high vacuum plasma-enhanced chemical vapor deposition (UHV/PECVD) system. According to high sensitivity secondary ion mass spectrometry, device quality hydrogenated amorphous silicon (a-Si:H) films deposited at 250°C at a deposition rate of 1 Å/s contains 1015 cm-3 of O, 1015 cm-3 of C, and 1014 cm-3 of N impurities, while low defect hydrogenated microcrystalline silicon (μc-Si:H) films deposited at 200°C at a very low rate of 0.1 Å/s include 1016 cm-3 of O, 1015 cm-3 of C and 1016 cm-3 of N. These are the lowest concentrations of atmospheric contaminants for these kinds of materials observed so far. The essential features of the present UHV/PECVD system are an extremely low outgassing rate of 8×10-9 Torr·s, extremely low partial pressure of contaminant gas species <10-12 Torn, and purification of feed gas SiH4 at “point of use”. These efforts are quite important not only for clarifying the microscopic mechanism of photo-induced degradation in a-Si:H, but also for enlarging the crystalline grain size in μc-Si:H. μc-Si:H with a grain size of ≍1000 Å as determined by Scherrer's formula can be obtained at the higher rate of 1.5 Å/s by utilizing a VHF (Very High Frequency) plasma. The specific origins of impurities in the films are also discussed.

Deposition of a-Ge:H in a Remote Plasma System

1990 ◽  
Vol 192 ◽  
Author(s):  
M. Heintze ◽  
C. E. Nebel ◽  
G. H. Bauer
Keyword(s):  
Fermi Level ◽  
Structural Properties ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Defect Density ◽  
Plasma Deposition ◽  
Optical Emission ◽  
Deposition Process ◽  
Remote Plasma ◽  
Plasma System

ABSTRACTThe remote plasma deposition process was studied by optical emission spectroscopy using Ne and N2 to detect He-metastables. a- Ge:H was prepared and its optoelectronic and structural properties were characterized. AM 1.5 photoconductivities around 10−6(Ωcm)−1 were obtained in intrinsic material with the Fermi level position lying near midgap. However, even in the best film the defect density is higher than 1017cm−3.

SiC synthesis by a plasma deposition process

1981 ◽  
Vol 76 (1) ◽  
pp. 1-10 ◽  
Author(s):  
Hideo Yoshihara ◽  
Hidefumi Mori ◽  
Mikiho Kiuchi
Keyword(s):  
Plasma Deposition ◽  
Deposition Process
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