Realization of high detectivity mid-infrared photodiodes based on highly mismatched AlInSb on GaAs substrates

2021 ◽  
Vol 129 (5) ◽  
pp. 053106
Author(s):  
H. Fujita ◽  
Y. Sakurai ◽  
D. Yasuda ◽  
O. Morohara ◽  
H. Geka ◽  
...  
Keyword(s):  
Mid Infrared ◽  
Gaas Substrates ◽  
Infrared Photodiodes

Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates

2019 ◽  
Vol 126 (13) ◽  
pp. 134501
Author(s):  
H. Fujita ◽  
M. Nakayama ◽  
O. Morohara ◽  
H. Geka ◽  
Y. Sakurai ◽  
...  
Keyword(s):  
Mid Infrared ◽  
Gaas Substrates ◽  
Dislocation Reduction ◽  
Infrared Photodiodes

Mid-infrared metamorphic interband cascade photodetectors on GaAs substrates

2015 ◽  
Vol 107 (21) ◽  
pp. 211114 ◽  
Author(s):  
Zhao-Bing Tian ◽  
Sanjay Krishna
Keyword(s):  
Mid Infrared ◽  
Gaas Substrates

scholarly journals InSb Avalanche Photodiodes on GaAs Substrates for Mid-Infrared Detection

2020 ◽  
Vol 67 (1) ◽  
pp. 179-184
Author(s):  
Y. Alimi ◽  
V. Pusino ◽  
Matthew J. Steer ◽  
D. R. S. Cumming
Keyword(s):  
Avalanche Photodiodes ◽  
Infrared Detection ◽  
Mid Infrared ◽  
Gaas Substrates

GaSb-based Materials for Mid-infrared Photodiodes Operating in the 0.9–2.55 μm Spectral Range

2002 ◽  
Vol 744 ◽  
Author(s):  
I.A. Andreev ◽  
E.V. Kunitsyna ◽  
M.P. Mikhailova ◽  
Yu.P. Yakovlev ◽  
A.F. Ioffe
Keyword(s):  
Epitaxial Growth ◽  
Spectral Range ◽  
Mid Infrared ◽  
Recent Developments ◽  
Infrared Photodiodes

ABSTRACTThe paper discusses some recent developments in the GaSb/GaInAsSb/GaAlAsSb heterostructure epitaxial growth and fabrication of GaInAsSb/GaAlAsSb photodiodes for the 0.9–2.55 μm spectral range.

scholarly journals InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates

Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 38
Author(s):  
Hackiewicz ◽  
Kopytko ◽  
Rutkowski ◽  
Martyniuk ◽  
Ciura
Keyword(s):  
Gaas Substrate ◽  
Room Temperature ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Type Ii ◽  
Electrical And Optical Properties ◽  
Mid Infrared ◽  
Type Ii Superlattice ◽  
Gaas Substrates ◽  
Optical Immersion

Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work. We compare the detection parameters of detectors grown on the native GaSb substrate and lattice-mismatched GaAs substrate and seek solutions to enhance device performance, specifically with using an optical immersion. The detectors grown on GaAs have better detection parameters at room temperature, but at lower temperatures the misfit dislocations become more important and detectors grown on GaSb become better.

scholarly journals Room temperature operation of mid-infrared InAs081Sb019 based photovoltaic detectors with an In02Al08Sb barrier layer grown on GaAs substrates

2018 ◽  
Vol 26 (5) ◽  
pp. 6249 ◽  
Author(s):  
Dae-Myeong Geum ◽  
SangHyeon Kim ◽  
SooSeok Kang ◽  
Hosung Kim ◽  
Hwanyeol Park ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Room Temperature ◽  
Mid Infrared ◽  
Gaas Substrates ◽  
Photovoltaic Detectors ◽  
Room Temperature Operation

Planar mid-infrared InAsSb photodetector grown on GaAs substrates by MOCVD

2019 ◽  
Vol 12 (12) ◽  
pp. 122009 ◽  
Author(s):  
Tingting Wang ◽  
Min Xiong ◽  
Yingchun Zhao ◽  
Xu Dong ◽  
Yu Zhao ◽  
...  
Keyword(s):  
Mid Infrared ◽  
Gaas Substrates
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