Mid-infrared metamorphic interband cascade photodetectors on GaAs substrates

2015 ◽  
Vol 107 (21) ◽  
pp. 211114 ◽  
Author(s):  
Zhao-Bing Tian ◽  
Sanjay Krishna
Keyword(s):  
Mid Infrared ◽  
Gaas Substrates

Realization of high detectivity mid-infrared photodiodes based on highly mismatched AlInSb on GaAs substrates

2021 ◽  
Vol 129 (5) ◽  
pp. 053106
Author(s):  
H. Fujita ◽  
Y. Sakurai ◽  
D. Yasuda ◽  
O. Morohara ◽  
H. Geka ◽  
...  
Keyword(s):  
Mid Infrared ◽  
Gaas Substrates ◽  
Infrared Photodiodes

scholarly journals InSb Avalanche Photodiodes on GaAs Substrates for Mid-Infrared Detection

2020 ◽  
Vol 67 (1) ◽  
pp. 179-184
Author(s):  
Y. Alimi ◽  
V. Pusino ◽  
Matthew J. Steer ◽  
D. R. S. Cumming
Keyword(s):  
Avalanche Photodiodes ◽  
Infrared Detection ◽  
Mid Infrared ◽  
Gaas Substrates

scholarly journals InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates

Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 38
Author(s):  
Hackiewicz ◽  
Kopytko ◽  
Rutkowski ◽  
Martyniuk ◽  
Ciura
Keyword(s):  
Gaas Substrate ◽  
Room Temperature ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Type Ii ◽  
Electrical And Optical Properties ◽  
Mid Infrared ◽  
Type Ii Superlattice ◽  
Gaas Substrates ◽  
Optical Immersion

Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work. We compare the detection parameters of detectors grown on the native GaSb substrate and lattice-mismatched GaAs substrate and seek solutions to enhance device performance, specifically with using an optical immersion. The detectors grown on GaAs have better detection parameters at room temperature, but at lower temperatures the misfit dislocations become more important and detectors grown on GaSb become better.

scholarly journals Room temperature operation of mid-infrared InAs081Sb019 based photovoltaic detectors with an In02Al08Sb barrier layer grown on GaAs substrates

2018 ◽  
Vol 26 (5) ◽  
pp. 6249 ◽  
Author(s):  
Dae-Myeong Geum ◽  
SangHyeon Kim ◽  
SooSeok Kang ◽  
Hosung Kim ◽  
Hwanyeol Park ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Room Temperature ◽  
Mid Infrared ◽  
Gaas Substrates ◽  
Photovoltaic Detectors ◽  
Room Temperature Operation

Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates

2019 ◽  
Vol 126 (13) ◽  
pp. 134501
Author(s):  
H. Fujita ◽  
M. Nakayama ◽  
O. Morohara ◽  
H. Geka ◽  
Y. Sakurai ◽  
...  
Keyword(s):  
Mid Infrared ◽  
Gaas Substrates ◽  
Dislocation Reduction ◽  
Infrared Photodiodes

Planar mid-infrared InAsSb photodetector grown on GaAs substrates by MOCVD

2019 ◽  
Vol 12 (12) ◽  
pp. 122009 ◽  
Author(s):  
Tingting Wang ◽  
Min Xiong ◽  
Yingchun Zhao ◽  
Xu Dong ◽  
Yu Zhao ◽  
...  
Keyword(s):  
Mid Infrared ◽  
Gaas Substrates

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

1986 ◽  
Vol 44 ◽  
pp. 816-817
Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Secondary Electron ◽  
Crystal Defects ◽  
Device Performance ◽  
Gaas Wafer ◽  
Surface Charging ◽  
Gaas Substrates ◽  
Voltage Contrast ◽  
Cathodoluminescence Imaging ◽  
Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

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