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Growth and characterization of mid‐infrared InGaAs/InAlAs strained triple‐quantum‐well light‐emitting diodes grown on lattice‐mismatched GaAs substrates
Journal of Applied Physics
◽
10.1063/1.363291
◽
1996
◽
Vol 80
(7)
◽
pp. 4177-4181
◽
Cited By ~ 2
Author(s):
B. Grietens
◽
C. Van Hoof
◽
P. Van Daele
◽
G. Borghs
Keyword(s):
Quantum Well
◽
Light Emitting Diodes
◽
Mid Infrared
◽
Light Emitting
◽
Gaas Substrates
Download Full-text
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Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes
Materials Science Forum
◽
10.4028/www.scientific.net/msf.389-393.1493
◽
2002
◽
Vol 389-393
◽
pp. 1493-1496
Author(s):
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G.R. Pozina
◽
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Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes
2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
◽
10.1109/nusod.2018.8570223
◽
2018
◽
Author(s):
Reza Arkani
◽
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◽
Eoin P. O'Reilly
Keyword(s):
Quantum Well
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Light Emitting Diodes
◽
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Light Emitting
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Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes
Applied Physics Letters
◽
10.1063/1.3425899
◽
2010
◽
Vol 96
(19)
◽
pp. 191102
◽
Cited By ~ 12
Author(s):
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◽
Sergey Suchalkin
◽
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◽
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◽
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◽
...
Keyword(s):
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◽
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Convergence of optical spectroscopic system for characterization of InGaN/GaN multi-quantum well light-emitting diodes
10.1117/12.699970
◽
2007
◽
Author(s):
June-Sik Park
◽
Dong-Yul Lee
◽
Sangsu Hong
◽
Je Won Kim
◽
Bae-Kyun Kim
Keyword(s):
Quantum Well
◽
Light Emitting Diodes
◽
Light Emitting
◽
Multi Quantum Well
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Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes
AIP Advances
◽
10.1063/1.4959100
◽
2016
◽
Vol 6
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◽
pp. 075108
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Cited By ~ 1
Author(s):
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◽
P. P. Maaskant
◽
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◽
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◽
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Quantum Well
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Light Emitting Diodes
◽
Optical Excitation
◽
Light Emitting
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Multi Quantum Well
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Characterization of InAs0.91Sb0.09for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution
Semiconductor Science and Technology
◽
10.1088/0268-1242/22/6/007
◽
2007
◽
Vol 22
(6)
◽
pp. 624-628
◽
Cited By ~ 6
Author(s):
A Krier
◽
M Stone
◽
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Keyword(s):
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◽
Liquid Phase Epitaxy
◽
Light Emitting Diodes
◽
Infrared Light
◽
Mid Infrared
◽
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◽
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Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes
Semiconductor Science and Technology
◽
10.1088/0268-1242/24/7/075001
◽
2009
◽
Vol 24
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◽
pp. 075001
◽
Cited By ~ 19
Author(s):
P J Carrington
◽
Q Zhuang
◽
M Yin
◽
A Krier
Keyword(s):
Quantum Well
◽
Temperature Dependence
◽
Light Emitting Diodes
◽
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◽
Mid Infrared
◽
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Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures
Materials Research Express
◽
10.1088/2053-1591/ab256d
◽
2019
◽
Vol 6
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◽
pp. 0850c8
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Yulin Meng
◽
Lianshan Wang
◽
Fangzheng Li
◽
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◽
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◽
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Light Emitting Diodes
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Multiple Quantum Well
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Dual Wavelength
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Multiple Quantum
◽
Light Emitting
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◽
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Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes
Applied Physics Letters
◽
10.1063/1.2339036
◽
2006
◽
Vol 89
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◽
pp. 091110
◽
Cited By ~ 19
Author(s):
A. Krier
◽
M. Stone
◽
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◽
Po-Wei Liu
◽
G. Tsai
◽
...
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Quantum Well
◽
Room Temperature
◽
Light Emitting Diodes
◽
Mid Infrared
◽
Light Emitting
◽
Multi Quantum Well
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Growth and characterization of single InGaN quantum well in nonpolar a -plane(112¯0)InGaN/GaN light-emitting diodes
Current Applied Physics
◽
10.1016/j.cap.2017.03.016
◽
2017
◽
Vol 17
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◽
pp. 842-846
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Cited By ~ 2
Author(s):
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◽
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Keyword(s):
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