scholarly journals Nanofabrication of graphene field-effect transistors by thermal scanning probe lithography

APL Materials ◽  
2021 ◽  
Vol 9 (1) ◽  
pp. 011107
Author(s):  
Xiangyu Liu ◽  
Zhujun Huang ◽  
Xiaorui Zheng ◽  
Davood Shahrjerdi ◽  
Elisa Riedo
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Scanning Probe ◽  
Scanning Probe Lithography

scholarly journals Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography

2015 ◽  
Vol 106 (10) ◽  
pp. 103503 ◽  
Author(s):  
Francisco M. Espinosa ◽  
Yu K. Ryu ◽  
Kolyo Marinov ◽  
Dumitru Dumcenco ◽  
Andras Kis ◽  
...  
Keyword(s):  
Thin Layer ◽  
Field Effect ◽  
Scanning Probe ◽  
Scanning Probe Lithography ◽  
Direct Fabrication ◽  
Nanoscale Transistors

Si-Based Single-Dopant Atom Devices

2011 ◽  
Vol 222 ◽  
pp. 205-208 ◽  
Author(s):  
Michiharu Tabe ◽  
Daniel Moraru ◽  
Arief Udhiarto ◽  
Sakito Miki ◽  
Miftahul Anwar ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
Dopant Atom ◽  
New Device ◽  
Probe Microscope ◽  
Dopant Atoms

We have recently proposed and demonstrated a new device concept, “Si-based single-dopant atom device”, consisting of only one or a few dopant atoms in the channel of Si field-effect transistors. The device characteristics are determined by a dopant, which is mediating electron or hole transport between source and drain electrodes. In this paper, our recent results on electronic and photonic applications are introduced. Furthermore, single-dopant images obtained by a scanning probe microscope are also presented.

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
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