A method to correct for leakage current effects in deep level transient spectroscopy measurements on Schottky diodes

1993 ◽  
Vol 74 (6) ◽  
pp. 3936-3943 ◽  
Author(s):  
K. Dmowski ◽  
B. Lepley ◽  
E. Losson ◽  
M. El Bouabdellati
Keyword(s):  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Transient Spectroscopy

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Effects of leakage current on deep level transient spectroscopy

1984 ◽  
Vol 44 (8) ◽  
pp. 790-792 ◽  
Author(s):  
M. C. Chen ◽  
D. V. Lang ◽  
W. C. Dautremont‐Smith ◽  
A. M. Sergent ◽  
J. P. Harbison
Keyword(s):  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 1167-1170 ◽  
Author(s):  
Vito Raineri ◽  
Fabrizio Roccaforte ◽  
Sebania Libertino ◽  
Alfonso Ruggiero ◽  
V. Massimino ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ion Irradiation ◽  
Deep Level ◽  
Schottky Diodes ◽  
Arrhenius Dependence ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.

Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy

2021 ◽  
Vol 36 (5) ◽  
pp. 055015
Author(s):  
Jiaxiang Chen ◽  
Haoxun Luo ◽  
HaoLan Qu ◽  
Min Zhu ◽  
Haowen Guo ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Trap Emission ◽  
Transient Spectroscopy ◽  
Kinetics Of
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