scholarly journals Comparison of dielectric loss in titanium nitride and aluminum superconducting resonators

2020 ◽  
Vol 117 (12) ◽  
pp. 124004
Author(s):  
A. Melville ◽  
G. Calusine ◽  
W. Woods ◽  
K. Serniak ◽  
E. Golden ◽  
...  
2012 ◽  
Vol 100 (26) ◽  
pp. 262605 ◽  
Author(s):  
Martin Sandberg ◽  
Michael R. Vissers ◽  
Jeffrey S. Kline ◽  
Martin Weides ◽  
Jiansong Gao ◽  
...  

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Shlomi Matityahu ◽  
Hartmut Schmidt ◽  
Alexander Bilmes ◽  
Alexander Shnirman ◽  
Georg Weiss ◽  
...  

AbstractIncreasing and stabilizing the coherence of superconducting quantum circuits and resonators is of utmost importance for various technologies, ranging from quantum information processors to highly sensitive detectors of low-temperature radiation in astrophysics. A major source of noise in such devices is a bath of quantum two-level systems (TLSs) with broad distribution of energies, existing in disordered dielectrics and on surfaces. Here we study the dielectric loss of superconducting resonators in the presence of a periodic electric bias field, which sweeps near-resonant TLSs in and out of resonance with the resonator, resulting in a periodic pattern of Landau–Zener transitions. We show that at high sweep rates compared to the TLS relaxation rate, the coherent evolution of the TLS over multiple transitions yields a significant reduction in the dielectric loss relative to the intrinsic value. This behavior is observed both in the classical high-power regime and in the quantum single-photon regime, possibly suggesting a viable technique to dynamically decouple TLSs from a qubit.


Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.


1985 ◽  
Vol 46 (C10) ◽  
pp. C10-565-C10-568
Author(s):  
M. WELLER ◽  
C. A. WERT ◽  
D. SCHLEE
Keyword(s):  

1989 ◽  
Vol 50 (C7) ◽  
pp. C7-169-C7-173
Author(s):  
R.C BUSCHERT ◽  
P. N. GIBSON ◽  
W. GISSLER ◽  
J. HAUPT ◽  
T. A. CRABB
Keyword(s):  

1980 ◽  
Vol 41 (5) ◽  
pp. 558-566
Author(s):  
O. Yu Elagina ◽  
◽  
D.O. Kolbas ◽  
A.G. Buklakov ◽  
N. Derr ◽  
...  

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