GLANCING INCIDENCE X-RAY STUDIES OF TITANIUM NITRIDE THIN FILMS USING A NEW MULTIPURPOSE LABORATORY SPECTROMETER

1989 ◽  
Vol 50 (C7) ◽  
pp. C7-169-C7-173
Author(s):  
R.C BUSCHERT ◽  
P. N. GIBSON ◽  
W. GISSLER ◽  
J. HAUPT ◽  
T. A. CRABB
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
X Ray

Blue Shift in Ultraviolet Absorption Spectra of Oxygen Doped Titanium Nitride Thin Films

2020 ◽  
Author(s):  
Manosi Roy ◽  
Dhananjay Kumar
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Titanium Nitride ◽  
Quantum Confinement Effect ◽  
Blue Shift ◽  
Laser Pulses ◽  
Visible Absorption ◽  
Tin Films ◽  
X Ray ◽  
Deposition Parameters

Abstract The objective of this study is to investigate the effect of film thickness on the bandgap of oxygen (O2)-doped titanium nitride (TiN) thin films. To accomplish this, high-quality two-dimensional O2-doped TiN films have been prepared on single-crystal sapphire substrates using a pulsed laser deposition method. The film thicknesses were varied from 3 to 100 nm by varying the number of laser pulses, while other deposition parameters are kept constant. X-ray diffraction (XRD) patterns have shown that the films grow in (111) orientation on the sapphire substrate. The increase in the intensity of the XRD (111) peak also demonstrates a better orientational alignment of the TiN films with substrate as the film thickness increases. The x-ray rocking curve has been used to measure the full width half maxima (FWHM) for each film. The FWHM values has been found to vary from 0.07 to 0.2° as the film thickness decreases. This is taken to indicate that the grain size decreases with a decrease in film thickness. Ultraviolet visible spectroscopy measurements in the wavelength range (200–800 nm) have been performed as well, which indicates an increase in the bandgap of O2-doped TiN films with a decrease in film thickness. The decrease in the film thickness leads to a blue shift of the peak in the ultraviolet-visible absorption (UV-A) region; this blueshift is accompanied by an increase in the bandgap of O2-doped TiN from 3.2 to 3.8 eV. The change in the bandgap due to a change in film thickness has been explained using the quantum confinement effect.

Characterizing process semiconductor thin films with a confocal micro X-ray fluorescence microscope

2006 ◽  
Vol 21 (2) ◽  
pp. 145-147 ◽  
Author(s):  
Chris M. Sparks ◽  
Elizabeth P. Hastings ◽  
George J. Havrilla ◽  
Michael Beckstead
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Titanium Nitride ◽  
Depth Profile ◽  
Gate Dielectric ◽  
Hafnium Silicate ◽  
X Ray ◽  
Dielectric Substrates ◽  
Semiconductor Thin Films

The versatility of confocal micro X-ray fluorescence (MXRF) in analyzing thin films on semiconductor wafers is demonstrated. Unlike conventional MXRF, confocal MXRF can depth profile sample layers and reduce spectral background. Nondestructive quantification of the silicon dioxide concentration in hafnium silicate thin films is an example of one application demonstrating the advantage of confocal MXRF. Additionally, the growth of titanium nitride films on various high-k gate dielectric substrates was analyzed with confocal MXRF due to its ability to detect sub-nm film thickness changes.

scholarly journals DEVELOPMENT AND EXPERIMENTAL STUDIES OF METHODS FOR INCREASING THE STABILITY OF MATERIALS OF ACCELERATING STRUCTURES TO HIGH VACUUM ELECTRICAL DISCHARGES

2019 ◽  
pp. 23-26
Author(s):  
V.A. Baturin ◽  
A.Yu. Karpenko ◽  
S.A. Yeryomin
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Experimental Technique ◽  
High Vacuum ◽  
Experimental Studies ◽  
Electrode System ◽  
Electrical Discharges ◽  
X Ray ◽  
The Stability

The experimental technique is described and the results of a study of the resistance to high vacuum electrical breakdowns of copper samples coated with thin films of titanium nitride are presented. The studies were carried out in a two-electrode system having the so-called “plane-tip” configuration. Using the method of X-ray diffractometry, we studied the effect of the structure of titanium nitride films on their efficiency as a material that reduces the probability of breakdown.

Characterization of Aluminium Titanium Nitride Thin Films Deposited by Reactive Magnetron Co-Sputtering

2010 ◽  
Vol 93-94 ◽  
pp. 340-343 ◽  
Author(s):  
Adisorn Buranawong ◽  
Surasing Chaiyakhun ◽  
Pichet Limsuwan
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Titanium Nitride ◽  
Deposition Time ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Constant Flow Rate ◽  
Transmission Electron

Nanocrystalline aluminium titanium nitride (AlTi3N) thin films were deposited on Si (100) wafers and grids by reactive magnetron co-sputtering technique using titanium and aluminium targets. The films were sputtered in Ar and N2 mixture at a constant flow rate under different conditions of deposition time ranging from 15 to 60 minutes. The crystal structure was characterized by X-Ray diffraction (XRD) and microstructure was analyzed by transmission electron microscopy (TEM). The results indicated that the formation of polycrystalline AlTi3N with the orthorhombic structure and the development of crystal structure was observed by varied the deposition time. The microstructure of films was good according to the XRD results. On the other hand, after annealed the films at 500OC in the air for 1 hour, the crystal structure did not change that exposed the stable structure of AlTi3N films.

scholarly journals X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 239
Author(s):  
Monzer Maarouf ◽  
Muhammad Baseer Haider ◽  
Qasem Ahmed Drmosh ◽  
Mogtaba B. Mekki
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Depth Profiling ◽  
Fused Silica ◽  
X Ray ◽  
Chemisorbed Oxygen ◽  
Different Temperatures ◽  
Hall Effect Measurements

Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films.

Hot Filament Assisted CVD of Titanium Nitride Films

1993 ◽  
Vol 327 ◽  
Author(s):  
Sadanand V. Deshpande ◽  
Erdogan Gulari
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Titanium Chloride ◽  
X Ray ◽  
Aluminum Metallization ◽  
Temperature Deposition ◽  
Hot Filament

AbstractTitanium nitride thin films have been deposited using a novel Hot Filament Chemical Vapor Deposition (HFCVD) technique. In this technique, a resistively heated tungsten wire (∼1700°C) is used to decompose ammonia to obtain highly reactive nitrogen precursor species. This approach allows for low temperature deposition of nitride thin films. In the past, we have used this method to deposit good quality silicon and aluminum nitride films. Titanium nitride thin films have been deposited on Si(100) at substrate temperatures from 500°C to 600°C. These films were characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction, Rutherford backscattering spectroscopy (RBS) and scanning electron microscopy. The effects of deposition pressure, substrate temperature and titanium chloride flow rate on film properties have been studied. TiN films with resistivities as low as 80.0 μΩ-cm have been deposited. RBS analysis indicates that the films serve as excellent diffusion barriers for copper and aluminum metallization on silicon.

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