scholarly journals High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors

2019 ◽  
Vol 90 (6) ◽  
pp. 063903
Author(s):  
S. Majdi ◽  
M. Gabrysch ◽  
N. Suntornwipat ◽  
F. Burmeister ◽  
R. Jonsson ◽  
...  
Keyword(s):  
High Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Spectroscopy System ◽  
Bandgap Semiconductors ◽  
Transient Spectroscopy

Investigation of carrier compensation traps in n−-GaN drift layer by high-temperature deep-level transient spectroscopy

2020 ◽  
Vol 117 (11) ◽  
pp. 112103
Author(s):  
Huayang Huang ◽  
Xuelin Yang ◽  
Shan Wu ◽  
Jianfei Shen ◽  
Xiaoguang He ◽  
...  
Keyword(s):  
High Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Drift Layer

Development of Computer Controlled Deep Level Transient Spectroscopy System

1998 ◽  
Vol 15 (1-2) ◽  
pp. 105-110
Author(s):  
P N Reddy ◽  
B P N Reddy ◽  
S V Pandurangaiah ◽  
K S Chari
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Computer Controlled ◽  
Spectroscopy System ◽  
Transient Spectroscopy

Process-Induced Defects in High-Purity GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
P. H. Campbell ◽  
O. Aina ◽  
B. J. Baliga ◽  
R. Ehle
Keyword(s):  
High Temperature ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Contacts ◽  
High Temperature Annealing ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTHigh temperature annealing of Si 3 N4 and SiO2 capped high purity LPE GaAs is shown to result in a reduction in the surface carrier concentration by about an order of magnitude. Au Schottky contacts made on the annealed samples were found to have severely degraded breakdown characteristics. Using deep level transient spectroscopy, deep levels at EC–.58eV, EC–.785eV were detected in the SiO2, capped samples and EC–.62eV, EC–.728eV in the Si3N4 capped Samples while none was detected in the unannealed samples.The electrical degradations are explained in terms of compensation mechanisns and depletion layer recombination-generation currents due to the deep levels.

Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3

2020 ◽  
Vol 128 (20) ◽  
pp. 205701
Author(s):  
Jossue Montes ◽  
Cameron Kopas ◽  
Hong Chen ◽  
Xuanqi Huang ◽  
Tsung-han Yang ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Wide Bandgap ◽  
Transient Spectroscopy

CW Laser Induced Deep Level Defects in Virgin Silicon.

1981 ◽  
Vol 4 ◽  
Author(s):  
A. Chantre ◽  
M. Kechouane ◽  
D. Bois
Keyword(s):  
High Temperature ◽  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Solid Phase ◽  
Deep Level ◽  
Deep Levels ◽  
Cw Laser ◽  
Temperature State ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTDeep Level Transient Spectroscopy has been used to investigate cw laser induced defects in virgin silicon. Two main regimes have been found. In the solid phase regime, two well defined deep levels at Ec−0.19 eV and Ec−0.45 eV are observed. This point defect introduction is proposed to be involved in the degradation of ion-implanted cw laser annealed junctions. The mechanism leading to point defects generation is likely to involve trapping of in–diffused vacancies, quenched–in from the high temperature state. In the slip lines or melt regimes, additionnal deep levels are detected, which are ascribed to dislocations.

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