Reliability characterization of MOVPE grown n-GaInP/p-GaAs heterojunctions vis-a-vis high temperature operation through photoreflectance spectroscopy, transmission electron microscopy and deep level transient spectroscopy

2004 ◽  
Author(s):  
S. Madra
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transmission Electron ◽  
Photoreflectance Spectroscopy ◽  
Transient Spectroscopy ◽  
High Temperature Operation

Defects Related to Sb-Mediated Ge Quantum Dots

2013 ◽  
Vol 205-206 ◽  
pp. 497-501
Author(s):  
Alexander A. Tonkikh ◽  
Victor Tapio Rangel-Kuoppa ◽  
Nikolay D. Zakharov ◽  
Wolfgang Jantsch ◽  
Peter Werner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Band Gap ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Valence Band Edge ◽  
Transmission Electron ◽  
Transient Spectroscopy ◽  
Active Trap

We report on a specific defect, which may form during the growth of Stranski-Krastanov surfactant-mediated Ge/Si (100) islands. Transmission electron microscopy reveals that these loop-like defects are local and could be represented by a missing plane of Ge atoms inside some of Ge islands. This specific defect may generate an electrically active trap within the Si band gap at about 0.3 eV above the Si valence band edge. Deep level transient spectroscopy reveals that at least 1 % of Ge islands may include such defects.

Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
J. L. Hoyt ◽  
E. F. Crabbé ◽  
R. F. W. Pease ◽  
J. F. Gibbons
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
High Temperature Annealing ◽  
Strong Reduction ◽  
Diffusion Front ◽  
Transmission Electron ◽  
Silicon Interface ◽  
New Evidence

ABSTRACTNonuniformities in the polysilicon-to-silicon interface and in the polysilicon structure are expected to produce a nonuniform diffusion front when arsenic is diffused from polysilicon during epitaxial alignment. Using transmission electron microscopy, we find surprisingly uniform arsenic diffusion fronts in the underlying silicon substrate following high temperature annealing. Several explanations of this result are proposed. We also report new evidence of a strong reduction in the time to achieve complete epitaxial transformation of the polysilicon when the polysilicon thickness is reduced. A corresponding reduction in the associated arsenic penetration depth is demonstrated.

Characterization of submicrometer fluid Inclusions in minerals by Analytical/Transmission Electron Microscopy and electron diffraction

1990 ◽  
Vol 48 (4) ◽  
pp. 424-424
Author(s):  
George Guthrie ◽  
David Veblen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Light Microscopy ◽  
Fluid Inclusions ◽  
Energy Dispersive Spectrometer ◽  
Analytical Transmission Electron Microscopy ◽  
Transmission Electron

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).

Intergrowth of niobium tungsten oxides of the tetragonal tungsten bronze type

2020 ◽  
Vol 75 (11) ◽  
pp. 913-919
Author(s):  
Frank Krumeich
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Tungsten Bronze ◽  
Structural Complexity ◽  
Dark Field ◽  
Tetragonal Tungsten Bronze ◽  
Tungsten Oxides ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractSince the 1970s, high-resolution transmission electron microscopy (HRTEM) is well established as the most appropriate method to explore the structural complexity of niobium tungsten oxides. Today, scanning transmission electron microscopy (STEM) represents an important alternative for performing the structural characterization of such oxides. STEM images recorded with a high-angle annular dark field (HAADF) detector provide not only information about the cation positions but also about the distribution of niobium and tungsten as the intensity is directly correlated to the local scattering potential. The applicability of this method is demonstrated here for the characterization of the real structure of Nb7W10O47.5. This sample contains well-ordered domains of Nb8W9O47 and Nb4W7O31 besides little ordered areas according to HRTEM results. Structural models for Nb4W7O31 and twinning occurring in this phase have been derived from the interpretation of HAADF-STEM images. A remarkable grain boundary between well-ordered domains of Nb4W7O31 and Nb8W9O47 has been found that contains one-dimensionally periodic features. Furthermore, short-range order observed in less ordered areas could be attributed to an intimate intergrowth of small sections of different tetragonal tungsten bronze (TTB) based structures.

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