High performance planar microcavity organic semiconductor lasers based on thermally evaporated top distributed Bragg reflector

2020 ◽  
Vol 117 (15) ◽  
pp. 153301
Author(s):  
Yongsheng Hu ◽  
Fatima Bencheikh ◽  
Sébastien Chénais ◽  
Sébastien Forget ◽  
Xingyuan Liu ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Organic Semiconductor ◽  
High Performance ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Planar Microcavity

scholarly journals Demonstration of polarization control GaN-based micro-cavity lasers using a rigid high-contrast grating reflector

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tsu-Chi Chang ◽  
Kuo-Bin Hong ◽  
Shuo-Yi Kuo ◽  
Tien-Chang Lu
Keyword(s):  
Semiconductor Lasers ◽  
Optical Pumping ◽  
Polarized Light ◽  
Transverse Magnetic ◽  
Bragg Reflector ◽  
Degree Of Polarization ◽  
High Contrast ◽  
Distributed Bragg Reflector ◽  
Output Mirror ◽  
High Contrast Grating

Abstract We reported on GaN microcavity (MC) lasers combined with one rigid TiO2 high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm2 when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14° (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.

scholarly journals An electrically pumped surface-emitting semiconductor green laser

2020 ◽  
Vol 6 (1) ◽  
pp. eaav7523 ◽  
Author(s):  
Yong-Ho Ra ◽  
Roksana Tonny Rashid ◽  
Xianhe Liu ◽  
Sharif Md. Sadaf ◽  
Kishwar Mashooq ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Lattice Mismatch ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Blue Laser ◽  
Bragg Reflector ◽  
New Paradigm ◽  
Distributed Bragg Reflector ◽  
Order Of Magnitude

Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)–free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm2, which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.

Tapered-cavity surface-emitting distributed-Bragg-reflector semiconductor lasers: modeling and experiment

2000 ◽  
Vol 6 (4) ◽  
pp. 594-600 ◽  
Author(s):  
H. Luo ◽  
K.J. Kasunic ◽  
S.H. Macomber ◽  
R. Bedford ◽  
J.V. Moloney ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Bragg Reflector ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Tapered Cavity
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