Tapered-cavity surface-emitting distributed-Bragg-reflector semiconductor lasers: modeling and experiment

2000 ◽  
Vol 6 (4) ◽  
pp. 594-600 ◽  
Author(s):  
H. Luo ◽  
K.J. Kasunic ◽  
S.H. Macomber ◽  
R. Bedford ◽  
J.V. Moloney ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Bragg Reflector ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Tapered Cavity

scholarly journals Demonstration of polarization control GaN-based micro-cavity lasers using a rigid high-contrast grating reflector

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tsu-Chi Chang ◽  
Kuo-Bin Hong ◽  
Shuo-Yi Kuo ◽  
Tien-Chang Lu
Keyword(s):  
Semiconductor Lasers ◽  
Optical Pumping ◽  
Polarized Light ◽  
Transverse Magnetic ◽  
Bragg Reflector ◽  
Degree Of Polarization ◽  
High Contrast ◽  
Distributed Bragg Reflector ◽  
Output Mirror ◽  
High Contrast Grating

Abstract We reported on GaN microcavity (MC) lasers combined with one rigid TiO2 high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm2 when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14° (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.

scholarly journals Вертикально-излучающие лазеры спектрального диапазона 1.55 mum, сформированные методом спекания

2018 ◽  
Vol 44 (1) ◽  
pp. 59
Author(s):  
А.В. Бабичев ◽  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
С.А. Блохин ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Modulation Frequency ◽  
Cutoff Frequency ◽  
Optical Power ◽  
Single Mode ◽  
Threshold Current ◽  
Bragg Reflector ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Aperture Diameter

AbstractThe results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

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